Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.最新文献_第5页

Thin film technology for electron beam crystallized silicon solar cells on low cost substrates 电子束结晶硅太阳能电池在低成本衬底上的薄膜技术

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190850

J. Heemeier, M. Rostalsky, F. Gromball, N. Linke, J. Muller

{"title":"Thin film technology for electron beam crystallized silicon solar cells on low cost substrates","authors":"J. Heemeier, M. Rostalsky, F. Gromball, N. Linke, J. Muller","doi":"10.1109/PVSC.2002.1190850","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190850","url":null,"abstract":"In the design described a combination of nitride and carbide layers enables the recrystallization of a silicon absorber deposited on graphite or glass substrates. The interface layer siliconcarbide improves the wettability of the silicon film and the substrate during electron beam recrystallization. To prevent entrapment of deep impurities from the glass substrate aluminumnitride is used as a diffusion barrier. Furthermore AlN is used as a supporting mechanical layer during Si crystallization, and titaniumnitride as electrical backside contact. Additionally the absorption of light is enhanced due to reflection at the TiN layer. Efficient Si deposition rates up to 300 nm/min are achieved by means of a PECVD process using trichlorosilane (SiHCl/sub 3/) and hydrogen (H/sub 2/). Scanning of a line shaped electron beam across the silicon surface significantly enlarges the grains as well as it reduces impurities. A crystalline absorber thickness up to 20 /spl mu/m is achieved without epitaxial growth. The layer interfaces are analyzed by scanning electron microscopy, x-ray diffraction and elastic recoil detection analysis.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131181501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Solar cell model for electron transport in photosynthesis 光合作用中电子传递的太阳能电池模型

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190859

T. Markvart, P. Landsberg

引用次数: 5

Accelerated testing of an encapsulant for PV modules 光伏组件封装剂加速测试

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190912

J.I. Hanoka

引用次数: 3

High-efficiency space and terrestrial multijunction solar cells through bandgap control in cell structures 通过带隙控制电池结构的高效率空间和地面多结太阳能电池

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190685

R. King, C. Fetzer, P. Colter, K. Edmondson, J. Ermer, H. Cotal, H. Yoon, A. Stavrides, G. Kinsey, D. Krut, N. H. Karam

{"title":"High-efficiency space and terrestrial multijunction solar cells through bandgap control in cell structures","authors":"R. King, C. Fetzer, P. Colter, K. Edmondson, J. Ermer, H. Cotal, H. Yoon, A. Stavrides, G. Kinsey, D. Krut, N. H. Karam","doi":"10.1109/PVSC.2002.1190685","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190685","url":null,"abstract":"Using the energy bandgap of semiconductors as a design parameter is critically important for achieving the highest efficiency multijunction solar cells. The bandgaps of lattice-matched semiconductors that are most convenient to use are rarely those which would result in the highest theoretical efficiency. For both the space and terrestrial solar spectra, the efficiency of 3-junction GaInP/GaAs/Ge solar cells can be increased by a lower bandgap middle cell, as for GaInAs middle cells, as well as by using higher bandgap top cell materials. Wide-bandgap and indirect-gap materials used in parasitically absorbing layers such as tunnel junctions help to increase transmission of light to the active cell layers beneath. Control of bandgap in such cell structures has been instrumental in achieving solar cell efficiencies of 29.7% under the AMO space spectrum (0.1353 W/cm/sup 2/, 28/spl deg/C) and 34% under the concentrated terrestrial spectrum (AM1.5G, 150-400 suns, 25/spl deg/C), the highest yet achieved for solar cells built on a single substrate.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132860216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 75

Scanning IQE-measurement for accurate current determination on very large area solar cells 扫描iiq测量法用于非常大面积太阳能电池的精确电流测定

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190557

B. Fischer, M. Keil, P. Fath, E. Bucher

引用次数: 22

Effect of back-contact copper concentration on CdTe cell operation 背接触铜浓度对CdTe电池运行的影响

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190676

A. Pudov, M. Gloeckler, S. Demtsu, J. Sites, K. Barth, R. A. Enzenroth, W. Sampath

引用次数: 20

Analysis of fill factor losses using current-voltage curves obtained under dark and illuminated conditions 利用在黑暗和光照条件下获得的电流-电压曲线分析填充因子损耗

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190559

P. Hacke, D. Meier

引用次数: 11

Contact shadowing losses reduction by fine line screen printing 通过细线丝网印刷减少接触阴影损失

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190545

M. Butturi, M. Stefancich, D. Vincenzi, G. Martinelli, L. Pirozzi, G. Arabito, M. Izzi, P. Mangiapane

引用次数: 5

Comprehensive study of the doping and injection-level dependence of stoichiometric silicon nitride passivation for silicon solar cells 硅太阳电池化学计量氮化硅钝化的掺杂和注入依赖的综合研究

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190466

M. Kerr, A. Cuevas

引用次数: 8

Japanese R&D activities of multi-junction and concentrator solar cells 日本在多结和聚光太阳能电池方面的研发活动

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190701

M. Yamaguchi, K. Araki

引用次数: 3