背接触铜浓度对CdTe电池运行的影响

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190676

A. Pudov, M. Gloeckler, S. Demtsu, J. Sites, K. Barth, R. A. Enzenroth, W. Sampath

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引用次数: 20

摘要

CdTe太阳能电池由五种不同浓度的铜制成，包括零铜，用于反向接触形成。室温J-V曲线显示，随着铜的还原，填充系数逐渐恶化。各cu水平的J/sub SC/和QE相似。电容测量表明，在铜存在的情况下，后接触处混合增强。还原铜电池的光电流映射不太均匀。当接触中使用足够的Cu时，高温应力引起的J-V变化很小。

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Effect of back-contact copper concentration on CdTe cell operation

CdTe solar cells were fabricated with five different concentrations of copper, including zero, used in back-contact formation. Room-temperature J-V curves showed progressive deterioration in fill factor with reduced copper. J/sub SC/ and QE were similar for all Cu-levels. Capacitance measurement suggested enhanced intermixing at the back contact with copper present. Photocurrent mapping was much less uniform for reduced-Cu cells. Elevated-temperature stress induced very little change in J-V when sufficient Cu was used in the contact.

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来源期刊

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

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