Analysis of fill factor losses using current-voltage curves obtained under dark and illuminated conditions

P. Hacke, D. Meier
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引用次数: 11

Abstract

Series resistance was determined using illuminated and dark J-V curves for a group of twenty-eight cells. The change in fill factor due to the series resistance power loss was calculated and subtracted from the Suns-Voc-determined fill factor, which represents the fill factor void of series resistance losses. On average, this difference was found to equal the cell fill factor. This agreement indicates the reliability of each of the components involved in the determination. As a result, the fill factor losses due to series resistance using only dark and illuminated J-V measurements are determined with good accuracy. The limitations of this analysis are also discussed.
利用在黑暗和光照条件下获得的电流-电压曲线分析填充因子损耗
采用光照和暗J-V曲线测定了28个电池的串联电阻。计算了串联电阻功率损失引起的填充因子的变化,并从sun - voc确定的填充因子中减去,该填充因子表示串联电阻损失的填充因子空白。平均而言,这种差异等于细胞填充因子。这一协议表明了测定中涉及的每个组件的可靠性。因此,仅使用黑暗和照明的J-V测量就能以良好的精度确定串联电阻引起的填充因子损耗。本文还讨论了这种分析的局限性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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