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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.最新文献

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Terrestrial solar spectral modeling tools and applications for photovoltaic devices 地面太阳光谱建模工具及其在光伏器件中的应用
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190943
Daryl R. Myers, K. Emery, C. Gueymard
{"title":"Terrestrial solar spectral modeling tools and applications for photovoltaic devices","authors":"Daryl R. Myers, K. Emery, C. Gueymard","doi":"10.1109/PVSC.2002.1190943","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190943","url":null,"abstract":"Variations in terrestrial spectral irradiance on photovoltaic devices can be an important consideration in photovoltaic device design and performance. This paper describes three available atmospheric transmission models, MODTRAN, SMARTS2, and SPCTRAL2. We describe the basics of their operation and performance, and applications in the photovoltaic community. Examples of model input and output data and comparisons between the model results for each under similar conditions are presented. The SMARTS2 model is shown to be much easier to use, as accurate as the complex MODTRAN model, and more accurate than the historical NREL SPCTRAL2 model.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114792795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
What is the appropriate reference spectrum for characterizing concentrator cells? 表征聚光电池的合适参考光谱是什么?
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190710
K. Emery, D. Myers, S. Kurtz
{"title":"What is the appropriate reference spectrum for characterizing concentrator cells?","authors":"K. Emery, D. Myers, S. Kurtz","doi":"10.1109/PVSC.2002.1190710","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190710","url":null,"abstract":"Consensus standards for determining the efficiency of a concentrator cell or module have not been developed. NREL, Sandia National Laboratory, the Fraunhofer Institute for Solar Energy in Germany, and the Progress in Photovoltaics Efficiency Table authors have informally agreed upon concentrator-cell reference conditions. These conditions are 25/spl deg/C cell temperature, 1-sun = 1000 W/m/sup 2/ total irradiance, and the ASTM E891-87 direct-normal reference spectrum. Deficiencies in the direct reference spectrum are discussed, and a more representative reference spectrum for evaluating concentrator cells is proposed. The spectrum was generated by the SMARTS model, and the atmospheric parameters are as close as possible to the existing direct spectrum, with the exception that the aerosol optical depth at 500 nm is reduced from 0.27 to 0.085.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116961845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 53
Narrower efficiency distribution for multicrystalline silicon solar cells by double-side emitter diffusion 多晶硅太阳能电池的双面射极扩散窄效率分布
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190538
M. Goris, A. Weeber, J. Bultman
{"title":"Narrower efficiency distribution for multicrystalline silicon solar cells by double-side emitter diffusion","authors":"M. Goris, A. Weeber, J. Bultman","doi":"10.1109/PVSC.2002.1190538","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190538","url":null,"abstract":"Multicrystalline silicon solar cells produced with double side emitter diffusion are compared with single side emitter diffused cells. Double side emitter diffusion yields in improved current and voltage for all materials of four multicrystalline silicon wafer suppliers. Poor quality material improves approximately 3% more than good quality material. This results in a narrower efficiency distribution over all material. No relation between substitutional carbon concentration, interstitial oxygen concentration and FeB concentration and improved current due to double side diffusion was found.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117300283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Rapid thermal processing for front and rear contact passivation 快速热处理前后接触钝化
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190546
S. Bowden, D.S. Kim, C. Honsberg, A. Rohatgi
{"title":"Rapid thermal processing for front and rear contact passivation","authors":"S. Bowden, D.S. Kim, C. Honsberg, A. Rohatgi","doi":"10.1109/PVSC.2002.1190546","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190546","url":null,"abstract":"Rapid firing processes are well known to allow improvements in solar cell contacts, particularly for the rear contact. Previous results characterizing the quality of a rear aluminum-alloyed back surface field have measured the effective surface recombination velocity, which depends not only on the material parameters of the back surface field, but also on the base doping. This paper shows that the determination of the recombination current density in the back surface field via photoconductance measurements is an accurate technique to measure the back surface field, independent of the base resistivity. Results show that fast firing conditions give the lowest recombination, but that the firing conditions can be altered substantially while still allowing high open circuit voltages.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116162712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Molecular level pathway to CIS deposition without post treatments 未经后处理的CIS沉积的分子水平途径
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190651
S. Menezes
{"title":"Molecular level pathway to CIS deposition without post treatments","authors":"S. Menezes","doi":"10.1109/PVSC.2002.1190651","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190651","url":null,"abstract":"CuInSe/sub 2/ (CIS) based thin-film devices could potentially provide high specific power for terrestrial or space power if they were fabricated at low temperatures on low-density polymer substrates. This paper presents a molecular level electrochemical approach that may permit direct deposition of morphologically homogenous, stoichiometric CIS-alloy absorber layers without high temperature post treatments. The paper investigates the effects of deposition parameters by monitoring voltammetric characteristics, pulsed flow/deposition waveforms and film composition with different deposition system configurations. It distinguishes the CIS formation reaction mechanisms in bulk and thin layer electrolytes and identifies two new deposition parameters to increase the content of difficult-to-electrodeposit metals like In and Ga. The results provide directions for low-temperature synthesis of device quality absorber layers for efficient, inexpensive PV modules.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"87 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116418810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synergy of phosphorus gettering and hydrogenation in multicrystalline silicon wafers and cells 多晶硅片和电池中磷的吸附和加氢的协同作用
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190483
S. Martinuzzi, I. Périchaud, S. De Wolf, F. Warchol
{"title":"Synergy of phosphorus gettering and hydrogenation in multicrystalline silicon wafers and cells","authors":"S. Martinuzzi, I. Périchaud, S. De Wolf, F. Warchol","doi":"10.1109/PVSC.2002.1190483","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190483","url":null,"abstract":"In mc-silicon the minority carrier diffusion length (L) is improved by external gettering or hydrogenation techniques. LBIC maps show that L increases except in \"bad regions\" which contain large densities of defects and impurities. It is proposed to use two steps: first gettering (1) then hydrogenation (2). Step (1): P diffusion at 850/spl deg/C, for 20 min, from a POC13 source, at low pressure (200 mbars), followed by a slow cool down to 700/spl deg/C; step (2): post-gettering deposition of a SiN-H antireflection coating by PECVD at 350/spl deg/C, followed by metallisation and firing at 700/spl deg/C. After step(1) L achieves 200 to 220 /spl mu/m, out of \"bad regions\". After a subsequent step(2) the recombination strength of extended defects is neatly reduced, especially in the bad regions, giving rise to an increase of the conversion efficiency by 1.5 to 3 percent absolute.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123461597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of glass Na content on adhesional strength of PV modules 玻璃钠含量对光伏组件粘接强度的影响
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190498
N. Dhere, N.R. Raravikar, A. Mikonowicz, C. Cording
{"title":"Effect of glass Na content on adhesional strength of PV modules","authors":"N. Dhere, N.R. Raravikar, A. Mikonowicz, C. Cording","doi":"10.1109/PVSC.2002.1190498","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190498","url":null,"abstract":"Effect of reduction of soda-ash content and more effective fixing of sodium in superstrate sodalime glass surface on durability of PV modules was studied. Damp-heat acceleration-tested PV modules having higher soda-ash content glass or normal SO/sub 2/-treated glass were most severely stained. Their adhesional strength was the lowest and delamination was most severe. High concentrations of impurities correlated with regions of delamination. Increasing the intensity of SO/sub 2/ treatment reduced the surface roughness, degree of staining, powder formation, and delamination; and increased the adhesional strength. The best approach is to reduce the sodium content as well as to fix the remaining sodium by an adequate sulfur-dioxide treatment and having fixed it not to disturb it during subsequent processes.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"249 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126154533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Amorphous silicon alloy materials, cells, and modules 非晶硅合金材料、电池和模块
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190791
S. Guha, J. Yang
{"title":"Amorphous silicon alloy materials, cells, and modules","authors":"S. Guha, J. Yang","doi":"10.1109/PVSC.2002.1190791","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190791","url":null,"abstract":"Recent progress in our understanding of amorphous silicon alloy grown on the edge of amorphous-to-microcrystalline transition using hydrogen dilution has led to the development of high efficiency multi-junction, multi-bandgap solar cells. Improvement in manufacturing technology has resulted in the design and construction of high volume (>25 MW per year) production plant. Amorphous silicon technology is now a significant player in the terrestrial market and is also making inroads in space application.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126195445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Vapor chloride treatment studies of CdTe/CdS solar cells CdTe/CdS太阳能电池的气相氯化物处理研究
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190653
H. Zhao, V. Palekis, P. Selvaraj, D. Morel, C. Ferekides
{"title":"Vapor chloride treatment studies of CdTe/CdS solar cells","authors":"H. Zhao, V. Palekis, P. Selvaraj, D. Morel, C. Ferekides","doi":"10.1109/PVSC.2002.1190653","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190653","url":null,"abstract":"The most commonly used processing step for the fabrication of CdTe thin film solar cells is a heat treatment in the presence of CdCI/sub 2/. This paper discusses results on the effect of a vapor CdCI/sub 2/ heat treatment on the characteristics of thin film CdTe/CdS solar cells. The heat treatment was carried out in three different ambient environments, He, O/sub 2/, and H/sub 2/, and over a wide range of temperatures. Best solar cell performance to-date was achieved for cells heat-treated in the presence of O/sub 2/. Solar cells heat-treated in He and H/sub 2/ exhibited lower ff's and Voc's respectively. The process was optimized for high throughput and demonstrated state of the art Voc's and ffs for short annealing times.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124609811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Current-voltage characteristics of polymer-fullerene solar cells 聚合物-富勒烯太阳能电池的电流-电压特性
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190853
I. Riedel, V. Dyakonov, J. Parisi, L. Lutsen, D. Vanderzande, J. Hummelen
{"title":"Current-voltage characteristics of polymer-fullerene solar cells","authors":"I. Riedel, V. Dyakonov, J. Parisi, L. Lutsen, D. Vanderzande, J. Hummelen","doi":"10.1109/PVSC.2002.1190853","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190853","url":null,"abstract":"We have studied the influence of temperature and light intensity on the current-voltage characteristics of polymer-fullerene bulk-heterojunction solar cells. The open-circuit voltage varies linearly with temperature in the range 200K-300K and approaches a value of 930mV at T=80K. Strictly positive temperature coefficients were found for both, the short-circuit current density and the fill factor. These cause the device efficiency to increase steadily with temperature up to T=330K. The short-circuit current density increases almost linearly with light intensity. The fill factor is not significantly influenced by the incident light intensity in the temperature range from 260K to 330K. At lower temperatures, a negative slope of the fill factor is observed. Since the maximum power point varies sublinearly with light intensity, a decrease of the power efficiency is obtained at light intensities higher than 3mW/cm/sup 2/.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129398139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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