多晶硅太阳能电池的双面射极扩散窄效率分布

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190538

M. Goris, A. Weeber, J. Bultman

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引用次数: 2

摘要

对双面发射极扩散法生产的多晶硅太阳电池与单面发射极扩散法生产的多晶硅太阳电池进行了比较。在四家多晶硅晶圆供应商的所有材料中，双面射极扩散产生了改善的电流和电压。质量差的材料比质量好的材料提高约3%。这导致所有材料的效率分布更窄。取代碳浓度、间隙氧浓度和FeB浓度与双侧扩散引起的电流改善没有关系。

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Narrower efficiency distribution for multicrystalline silicon solar cells by double-side emitter diffusion

Multicrystalline silicon solar cells produced with double side emitter diffusion are compared with single side emitter diffused cells. Double side emitter diffusion yields in improved current and voltage for all materials of four multicrystalline silicon wafer suppliers. Poor quality material improves approximately 3% more than good quality material. This results in a narrower efficiency distribution over all material. No relation between substitutional carbon concentration, interstitial oxygen concentration and FeB concentration and improved current due to double side diffusion was found.

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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

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