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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.最新文献

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Terrestrial and space concentrator PV modules with composite (glass-silicone) Fresnel lenses 地面和空间聚光光伏组件与复合(玻璃硅)菲涅耳透镜
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190920
V. Rumyantsev, O. I. Chosta, V. Grilikhes, N. Sadchikov, A. A. Soluyanov, M. Shvarts, V. Andreev
{"title":"Terrestrial and space concentrator PV modules with composite (glass-silicone) Fresnel lenses","authors":"V. Rumyantsev, O. I. Chosta, V. Grilikhes, N. Sadchikov, A. A. Soluyanov, M. Shvarts, V. Andreev","doi":"10.1109/PVSC.2002.1190920","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190920","url":null,"abstract":"We present the use of small-aperture, linear and point-focus composite Fresnel lenses in space and terrestrial photovoltaic modules based on III-V solar cells. These lenses combine the positive features of conventional silicate glass and a stable polymer material such as silicone rubber. Optical efficiency measurements have been carried out on practical samples of \"terrestrial\" concentrators with varying lens' focal distance and aperture, as well as the receiver diameter. Introduction of small-size secondary lenses integrated in an intermediate panel with composite structure (glass plate + convex silicone lenses) allows one to improve the parameters of a concentrator system at high concentration ratios.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128347924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Shunt imaging in solar cells using low cost commercial liquid crystal sheets 使用低成本商用液晶片的太阳能电池分流成像
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190555
C. Ballif, S. Peters, J. Isenberg, S. Riepe, D. Borchert
{"title":"Shunt imaging in solar cells using low cost commercial liquid crystal sheets","authors":"C. Ballif, S. Peters, J. Isenberg, S. Riepe, D. Borchert","doi":"10.1109/PVSC.2002.1190555","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190555","url":null,"abstract":"A simple low cost set-up to determine the location of shunts in solar cells has been developed. Our manual system can reproducibly detect all major shunts in large area reverse biased solar cells at a rate of 1 cell every 12 seconds and allows therefore the imaging of large numbers of cells in a short time. The system is based on the use of commercial liquid crystal sheets which are brought into thermal contact with the solar cell by vacuum. The colour change of the sheet is an indication of the local heating of the cell at shunt locations under reverse bias at typical voltages between -2 and -10 V. The detected shunts are the same as the ones found in lock-in infrared thermography at reverse bias. We discuss some of the system specifications and limitations and give several application examples, with a special emphasis on edge isolation.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128374299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Properties of reactively sputtered ZnTe:N and its use in recombination junctions 反应溅射ZnTe:N的性能及其在复合结中的应用
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190621
J. Drayton, C. Taylor, A. Gupta, R. Bohn, G. Rich, A. Compaan, B. McCandless, D. Rose
{"title":"Properties of reactively sputtered ZnTe:N and its use in recombination junctions","authors":"J. Drayton, C. Taylor, A. Gupta, R. Bohn, G. Rich, A. Compaan, B. McCandless, D. Rose","doi":"10.1109/PVSC.2002.1190621","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190621","url":null,"abstract":"Reactively sputtered ZnTe:N is a close valence-band match to CdTe, transparent below 2.2 eV and therefore an attractive candidate for a back contact/tunnel junction in tandem cells using CdTe or CdZnTe top cells. We report on measurements of the optical emission spectra of N/sub 2/ during reactive sputtering as part of the doping optimization. For materials characterization, a series of films produced with various N/sub 2//Ar gas ratios were studied by x-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy, optical absorption, variable angle spectroscopic ellipsometry (VASE), and the Hall effect. For transparent back contact fabrication, we used a ZnTe:N/ZnO:Al recombination junction bilayer.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127037064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation of transport mechanism in silicon solar cells after the exploitation in space 空间开发后硅太阳能电池输运机制的研究
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190760
B. Budaguan, A. Sherchenkov, A. Sizov, A. Grabov
{"title":"Investigation of transport mechanism in silicon solar cells after the exploitation in space","authors":"B. Budaguan, A. Sherchenkov, A. Sizov, A. Grabov","doi":"10.1109/PVSC.2002.1190760","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190760","url":null,"abstract":"The degradation of solar cells leads to the modification of charge carriers transport mechanism. This is accompanied by the changes of I-V characteristic of solar cells. So, in this work the measurements of I-V characteristics and analysis of the charge carriers transport mechanisms in silicon solar cells after long-term exploitation in near-Earth orbit were carried out.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127211448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Start-up and operation of an integrated 10 MW/sub p/ thin film PV module factory 10兆瓦/次/薄膜光伏组件一体化工厂的启动和运行
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190627
D. Bonnet, S. Oelting, M. Harr, S. Will
{"title":"Start-up and operation of an integrated 10 MW/sub p/ thin film PV module factory","authors":"D. Bonnet, S. Oelting, M. Harr, S. Will","doi":"10.1109/PVSC.2002.1190627","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190627","url":null,"abstract":"ANTEC Solar GmbH has entered production of thin film solar modules on a scale of 100,000 m/sup 2/ per year, using closed-spaced sublimation as the deposition technique for the semiconductor films and high-rate in-line sputtering for transparent and opaque contacts. The standard module size is 60 /spl times/ 120 cm/sup 2/. The equipment has been built, installed and integrated in 2000, start-up phase has been finished in September 2001. Full capacity of 11,000 modules per month will be achieved during the second half of 2002. The line operates 24 hours per day for seven days per week, allowing for one service shift to replenish consumed materials. The line presently has a cycle time of 120 s, which is planned to be decreased to the nominal value of 90 s. Efficiencies of the CdS/CdTe standard modules are about 7%, expected to rise continuously with time.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130067419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Laser-fired contacts - transfer of a simple high efficiency process scheme to industrial production 激光烧结触点——将一种简单高效的工艺方案转移到工业生产中
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190473
R. Preu, E. Schneiderlochner, A. Grohe, S. Glunz, G. Willeke
{"title":"Laser-fired contacts - transfer of a simple high efficiency process scheme to industrial production","authors":"R. Preu, E. Schneiderlochner, A. Grohe, S. Glunz, G. Willeke","doi":"10.1109/PVSC.2002.1190473","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190473","url":null,"abstract":"Laser-fired Contacts (LFC) have just recently been proposed as a simple way to realize local contacting for a passivated rear surface. Efficiencies above 20% have been reported for this technology. This work aims to assess the current status of the transfer of this process scheme to industrial production. The application of laser-fired contacts to 2 /spl Omega//spl euro/cm silicon wafers yielding an open circuit voltage of more than 660 mV clearly indicates the formation of a local aluminum back surface field. A newly developed pilot type laser system with automated wafer handling is presented. Due to the use of scanning mirrors for the movement of the laser beam the LFC process time is reduced to just a few seconds per wafer. Finally the most important criteria for an industrial transfer are discussed in comparison to the standard Aluminum back surface field (Al-BSF), being the benchmark for any other rear surface passivation scheme up to now.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131034106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Performance analysis of a PV array installed on building walls in a snowy country 雪域地区建筑墙体光伏阵列性能分析
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190926
K. Yoshioka, J. Hasegawa, T. Saitoh, S. Yatabe
{"title":"Performance analysis of a PV array installed on building walls in a snowy country","authors":"K. Yoshioka, J. Hasegawa, T. Saitoh, S. Yatabe","doi":"10.1109/PVSC.2002.1190926","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190926","url":null,"abstract":"This paper summarizes the performance and analysis of a 12 kWp PV array installed on building walls in a snowy country in Japan. The analysis is based on the monitoring results over 2 years since 1999. The highlight of this PV system is that the DC energy output increased by reflection of sunlight from fresh snow around the PV array. Analyzed results show daily integrated DC energy outputs on snowy days are much higher than those without snowfall. The analyzed results also show the reflection from snow affects not only the power output, but also a power rating of inverter for the building-wall PV system.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130196067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Phase-sensitive LBIC analysis 相敏LBIC分析
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190554
T. Pernau, P. Fath, E. Bucher
{"title":"Phase-sensitive LBIC analysis","authors":"T. Pernau, P. Fath, E. Bucher","doi":"10.1109/PVSC.2002.1190554","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190554","url":null,"abstract":"We built a setup for local current and voltage analysis as well as reflection measurements. The sample is illuminated by four amplitude-modulated diode lasers with wavelengths of 635 nm, 835 nm, 910 nm and 980 nm coupled into one optical fibre. The phase shift introduced by the solar cell depends on carrier lifetime, carrier diffusion velocity, time delay in both instrument and sample and the impedances incorporated in the solar cell itself. At a reference frequency of 1 kHz, the phase shift introduced by carrier lifetime and diffusion dynamics is around 1/spl deg/, the solar cell's internal capacitors and resistors introduce a phase shift of up to 70/spl deg/. Significant structure in phase maps is only visible in the long wavelength range (833 nm, 910 nm and 980 nm).","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132967656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Detailed balance efficiency of a three level system with thermionic transitions 热离子跃迁三能级系统的详细平衡效率
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190786
S. Bremner, C. Honsberg
{"title":"Detailed balance efficiency of a three level system with thermionic transitions","authors":"S. Bremner, C. Honsberg","doi":"10.1109/PVSC.2002.1190786","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190786","url":null,"abstract":"A three energy level model used in previous detailed balance analyses has been modified to allow the transition of carriers across one of the internal band gaps to be completely non-radiative. The transitions across all three of the band gaps in the model are typically taken to be radiative, however, in this work the transitions across the smaller internal band gap are taken to be thermionic in nature. Calculations using the modified model were performed for GaAs based devices under one sun illumination. The results show an efficiency improvement for the three energy level system over the homojunction limit for low values of the smaller internal band gap. The efficiency improvement is shown to increase as the thermionic rates are increased artificially. The implications of these results in terms of devices such as Quantum Well Solar Cells are discussed.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130827895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Recombination currents in microcrystalline silicon solar cells studied by electrically detected magnetic resonance 用电探测磁共振研究微晶硅太阳能电池中的复合电流
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190814
K. Lips, W. Fuhs, F. Fingers
{"title":"Recombination currents in microcrystalline silicon solar cells studied by electrically detected magnetic resonance","authors":"K. Lips, W. Fuhs, F. Fingers","doi":"10.1109/PVSC.2002.1190814","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190814","url":null,"abstract":"We report on a detailed study of electrically detected magnetic resonance (EDMR) of the dark current in microcrystalline silicon (/spl mu/c-Si:H) and amorphous silicon (a-Si:H) pin solar cells. For small forward bias, in both types of cells the EDMR spectrum is dominated by a positive signal at g = 2.005. The signal is associated with the recombination current and is determined by recombination through neutral dangling bonds in the space charge region. Whereas the EDMR signal of the a-Si:H pin cells changes sign above a bias of 0.75 V indicating the reversal of the electric field in the i layer, the signal in the pc-Si:H diode disappears above 0.6 V. With the help of a simple model developed for c-Si pn junctions, we will show that the EDMR behavior of the /spl mu/c-Si:H cell can be described by recombination and diffusion currents. This is different from what we find for a-Si:H pin devices, where an additional drift component is needed to fully describe the EDMR behavior.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130509280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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