反应溅射ZnTe:N的性能及其在复合结中的应用

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190621

J. Drayton, C. Taylor, A. Gupta, R. Bohn, G. Rich, A. Compaan, B. McCandless, D. Rose

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引用次数: 2

摘要

反应溅射的ZnTe:N与CdTe的价带匹配密切，在2.2 eV以下透明，因此是使用CdTe或CdZnTe顶部电池的串联电池的后接触/隧道结的有吸引力的候选物。作为掺杂优化的一部分，我们报道了在反应溅射过程中N/sub 2/的光学发射光谱的测量。在材料表征方面，采用x射线衍射(XRD)、原子力显微镜(AFM)、拉曼光谱、光学吸收、变角光谱椭偏仪(VASE)和霍尔效应研究了一系列不同N/sub /Ar气体比制备的薄膜。对于透明背触点的制造，我们使用了ZnTe:N/ZnO:Al复合结双层结构。

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Properties of reactively sputtered ZnTe:N and its use in recombination junctions

Reactively sputtered ZnTe:N is a close valence-band match to CdTe, transparent below 2.2 eV and therefore an attractive candidate for a back contact/tunnel junction in tandem cells using CdTe or CdZnTe top cells. We report on measurements of the optical emission spectra of N/sub 2/ during reactive sputtering as part of the doping optimization. For materials characterization, a series of films produced with various N/sub 2//Ar gas ratios were studied by x-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy, optical absorption, variable angle spectroscopic ellipsometry (VASE), and the Hall effect. For transparent back contact fabrication, we used a ZnTe:N/ZnO:Al recombination junction bilayer.

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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

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