Production of thin (70-100 /spl mu/m) crystalline silicon cells for conformable modules

D. Meier, J. Jessup, P. Hacke, S. Granata, N. Ishikawa, M. Emoto
{"title":"Production of thin (70-100 /spl mu/m) crystalline silicon cells for conformable modules","authors":"D. Meier, J. Jessup, P. Hacke, S. Granata, N. Ishikawa, M. Emoto","doi":"10.1109/PVSC.2002.1190468","DOIUrl":null,"url":null,"abstract":"PhosTop solar cells, having a back Al alloy p-n junction with a Ag/SiN/sub x//n/sup +/np/sup +//Al structure, were fabricated from dendritic web silicon substrates 70-100 /spl mu/m thick. High-throughput, automated production tools (screen printers, belt furnaces, etc.) were used to produce 3.3 cm /spl times/ 10.0 cm cells. Cell blanks remained essentially flat throughout the process, in spite of full back coverage by screen-printed and alloyed aluminum. The ability of thin web substrates to remain flat is tentatively attributed to three factors: the open structure of the aluminum layer (89% packing factor), the relatively small thickness of the aluminum layer (17 /spl mu/m), and the effective stiffening of the web substrate by slip dislocations pushed against internal twin planes. Cell efficiencies up to 14.1%, with excellent IQE, were obtained. These thin web cells were found to conform comfortably to the curved surface of a cylinder 15 cm in diameter. Demonstration modules, designed to fit around a pole 50 cm in diameter, were also fabricated.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2002.1190468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

PhosTop solar cells, having a back Al alloy p-n junction with a Ag/SiN/sub x//n/sup +/np/sup +//Al structure, were fabricated from dendritic web silicon substrates 70-100 /spl mu/m thick. High-throughput, automated production tools (screen printers, belt furnaces, etc.) were used to produce 3.3 cm /spl times/ 10.0 cm cells. Cell blanks remained essentially flat throughout the process, in spite of full back coverage by screen-printed and alloyed aluminum. The ability of thin web substrates to remain flat is tentatively attributed to three factors: the open structure of the aluminum layer (89% packing factor), the relatively small thickness of the aluminum layer (17 /spl mu/m), and the effective stiffening of the web substrate by slip dislocations pushed against internal twin planes. Cell efficiencies up to 14.1%, with excellent IQE, were obtained. These thin web cells were found to conform comfortably to the curved surface of a cylinder 15 cm in diameter. Demonstration modules, designed to fit around a pole 50 cm in diameter, were also fabricated.
生产薄(70-100 /spl mu/m)的晶体硅电池
PhosTop太阳能电池采用70-100 /spl μ m厚度的树枝状网状硅衬底制备,其背面为Ag/SiN/sub x//n/sup +/np/sup +//Al结构的铝合金p-n结。采用高通量、自动化生产工具(丝网打印机、带式炉等)生产3.3 cm /spl次/ 10.0 cm的电池。在整个过程中,电池毛坯基本上保持平坦,尽管丝网印刷和合金铝覆盖了整个背面。薄板基板保持平整的能力暂定归因于三个因素:铝层的开放式结构(89%的填充系数),铝层的相对较小的厚度(17 /spl mu/m),以及由内部双平面推动的滑移位错对板基板的有效加强。电池效率高达14.1%,具有良好的IQE。这些薄的网状细胞被发现与直径为15厘米的圆柱体的曲面很好地吻合。演示模块,设计适合直径50厘米左右的杆,也制作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信