采用大面积沉积系统的氮化硅高效表面钝化

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190508

W. Kintzel, M. Bail, R. Auer, R. Brendel

{"title":"采用大面积沉积系统的氮化硅高效表面钝化","authors":"W. Kintzel, M. Bail, R. Auer, R. Brendel","doi":"10.1109/PVSC.2002.1190508","DOIUrl":null,"url":null,"abstract":"We demonstrate high quality surface passivation of Si wafers with silicon nitride films deposited on an area of 40/spl times/40 cm/sup 2/ in a remote plasma-enhanced chemical vapor deposition system. We deposit silicon nitride films on both sides of the wafers at various temperatures and source gas pressures. Lifetime measurements yield a surface recombination velocity of S/sub eff/ = 32 cm/s using Si wafers with a resistivity of 1.4 /spl Omega/cm. The standard deviation of S/sub eff/ is as small as 4 cm/s over the area of 40/spl times/40 cm/sup 2/.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Efficient surface passivation by silicon nitride using a large area deposition system\",\"authors\":\"W. Kintzel, M. Bail, R. Auer, R. Brendel\",\"doi\":\"10.1109/PVSC.2002.1190508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate high quality surface passivation of Si wafers with silicon nitride films deposited on an area of 40/spl times/40 cm/sup 2/ in a remote plasma-enhanced chemical vapor deposition system. We deposit silicon nitride films on both sides of the wafers at various temperatures and source gas pressures. Lifetime measurements yield a surface recombination velocity of S/sub eff/ = 32 cm/s using Si wafers with a resistivity of 1.4 /spl Omega/cm. The standard deviation of S/sub eff/ is as small as 4 cm/s over the area of 40/spl times/40 cm/sup 2/.\",\"PeriodicalId\":177538,\"journal\":{\"name\":\"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2002.1190508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2002.1190508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

我们展示了在远程等离子体增强化学气相沉积系统中，氮化硅薄膜沉积在40/spl倍/40 cm/sup 2/的面积上的高质量硅片表面钝化。我们在不同温度和气源压力下在晶圆的两侧沉积氮化硅薄膜。使用电阻率为1.4 /spl ω /cm的硅晶片，寿命测量得出表面复合速度为S/sub / / = 32 cm/ S。S/ subeff /在40/spl × /40 cm/sup /的面积上的标准差小至4 cm/ S。

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Efficient surface passivation by silicon nitride using a large area deposition system

We demonstrate high quality surface passivation of Si wafers with silicon nitride films deposited on an area of 40/spl times/40 cm/sup 2/ in a remote plasma-enhanced chemical vapor deposition system. We deposit silicon nitride films on both sides of the wafers at various temperatures and source gas pressures. Lifetime measurements yield a surface recombination velocity of S/sub eff/ = 32 cm/s using Si wafers with a resistivity of 1.4 /spl Omega/cm. The standard deviation of S/sub eff/ is as small as 4 cm/s over the area of 40/spl times/40 cm/sup 2/.

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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

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