p/sup +/ CdTe与Cu/sub 2/Te电极接触的形成及其在CdTe电池中的稳定性

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190622

J. Yun, K. Kim, D. Lee, Byung Tee Ahn, T. Ohno

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引用次数: 1

摘要

利用Cu/sub /Te电极作为Cu源制备p/sup +/-CdTe，并对其在CdTe电池中的稳定性进行了研究。在室温下沉积Cu/sub / 2/Te，在CdTe/Cu/sub /Te界面处形成非晶间层，在200/spl℃下退火晶化，促进了六方相的生长。在180/spl℃退火时形成了良好的p/sup +/欧姆接触，在200/spl℃退火时获得了最佳的效率。在正向偏压下电池效率下降，在反向偏压下和额外退火下电池效率都有所提高或恢复，CdTe层越薄的电池效率下降得更快，受偏压应力的影响更严重。

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Formation of p/sup +/ CdTe contact with Cu/sub 2/Te electrode and its stability in CdTe cells

Cu/sub 2/Te electrode was utilized as a Cu source to form p/sup +/-CdTe and its stability in CdTe cells has been investigated. An amorphous interlayer was found at the CdTe/Cu/sub 2/Te interface by depositing Cu/sub 2/Te at room temperature and it was crystallized by annealing at 200/spl deg/C, enhancing the growth of hexagonal phase compared to orthorhombic phase. A good p/sup +/ ohmic contact was formed at 180/spl deg/C annealing and the best efficiency was obtained at 200/spl deg/C. The cell efficiency was degraded under forward bias and it was either improved or recovered both under reverse bias and by additional annealing, The cell with thinner CdTe layer was degraded faster and more severely affected by bias stress.

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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

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