Efficient surface passivation by silicon nitride using a large area deposition system

Abstract

We demonstrate high quality surface passivation of Si wafers with silicon nitride films deposited on an area of 40/spl times/40 cm/sup 2/ in a remote plasma-enhanced chemical vapor deposition system. We deposit silicon nitride films on both sides of the wafers at various temperatures and source gas pressures. Lifetime measurements yield a surface recombination velocity of S/sub eff/ = 32 cm/s using Si wafers with a resistivity of 1.4 /spl Omega/cm. The standard deviation of S/sub eff/ is as small as 4 cm/s over the area of 40/spl times/40 cm/sup 2/.