高效薄膜硅太阳能电池及组件

K. Yamamoto, A. Nakajima, M. Yoshimi, T. Sawada, S. Fukuda, K. Hayashi, T. Suezaki, M. Ichikawa, Y. Koi, M. Goto, H. Takata, Y. Tawada
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引用次数: 65

摘要

a-Si:H/透明层间/晶体硅太阳能电池(总面积为1cm/sup 2/)的初始效率为14.5% (Jsc=14.4mA/cm/sup 2/, Voc=1.41V, FF=71.9%)。采用低温等离子体化学气相沉积法制备了a-Si和晶体Si薄膜。在不增加a-Si:H层厚度的情况下,引入透明中间层增强了短路电流(Jsc)。910/spl次/455mm/sup 2/ a-Si/晶体Si薄膜集成太阳能电池组件的初始孔径效率达到12.3%。在1/spl次/1m/sup / 2/面积的条件下,获得了11 A/s的较高沉积速率。采用这种高沉积速率的沉积条件,获得了初始孔径效率为11.2%的大尺寸硅堆叠太阳能电池组件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High efficiency thin film silicon solar cell and module
An initial efficiency of 14.5% (Jsc=14.4mA/cm/sup 2/, Voc=1.41V, FF=71.9%) has been achieved for a-Si:H/transparent inter-layer/crystalline Si solar cell (total area of 1cm/sup 2/). Both a-Si and crystalline Si films were fabricated by plasma chemical vapor deposition at low temperature. The short circuit current (Jsc) was enhanced by the introduction of transparent interlayer without increasing the thickness of a-Si:H layer. An initial aperture efficiency of 12.3% has been achieved for 910/spl times/455mm/sup 2/ a-Si/crystalline Si thin film integrated solar cell module. Reasonably high deposition rate of 11 A/s for the deposition of crystalline Si for 1/spl times/1m/sup 2/ area has been achieved. By applying a deposition conditions of this high deposition rate, an initial aperture efficiency of 11.2% has been obtained above sized Si stacked solar cell module.
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