Investigation on the role of oxygen in /spl mu/c-Si:H thin film and its deposition process with VHF-PECVD

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190838

Huidong Yang, Chunya Wu, Y. Mai, Hongbo Li, Yan Li, X. Geng, Ying Zhao, S. Xiong

{"title":"Investigation on the role of oxygen in /spl mu/c-Si:H thin film and its deposition process with VHF-PECVD","authors":"Huidong Yang, Chunya Wu, Y. Mai, Hongbo Li, Yan Li, X. Geng, Ying Zhao, S. Xiong","doi":"10.1109/PVSC.2002.1190838","DOIUrl":null,"url":null,"abstract":"Investigations on the role of oxygen in /spl mu/c-Si:H films deposited with and without load lock chamber by VHF-PECVD technique have been reported in this paper. From the results of in-situ optical emission spectroscopy (OES), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared absorption (FTIR) measurements, it can be identified that oxygen existing in /spl mu/c-Si:H film with different bonding modes, namely Si-O bonding, O-H bonding and O-O bonding. In addition, the influences of oxygen on the structural and electrical properties of films are studied with Raman spectra, conductivity (/spl sigma/) and active energy (E/sub a/) measurements. The results reveal the structural properties of /spl mu/c-Si:H film strongly depends on the bonding modes of the existing oxygen, the electrical properties especially show that the role of oxygen in /spl mu/c-Si:H films is different from those in a-Si:H and the essential mechanism needs to be further explored.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2002.1190838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

Investigations on the role of oxygen in /spl mu/c-Si:H films deposited with and without load lock chamber by VHF-PECVD technique have been reported in this paper. From the results of in-situ optical emission spectroscopy (OES), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared absorption (FTIR) measurements, it can be identified that oxygen existing in /spl mu/c-Si:H film with different bonding modes, namely Si-O bonding, O-H bonding and O-O bonding. In addition, the influences of oxygen on the structural and electrical properties of films are studied with Raman spectra, conductivity (/spl sigma/) and active energy (E/sub a/) measurements. The results reveal the structural properties of /spl mu/c-Si:H film strongly depends on the bonding modes of the existing oxygen, the electrical properties especially show that the role of oxygen in /spl mu/c-Si:H films is different from those in a-Si:H and the essential mechanism needs to be further explored.

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氧在/spl mu/c-Si:H薄膜中的作用及其VHF-PECVD沉积工艺研究

用VHF-PECVD技术研究了氧在带和不带负载锁腔的/spl mu/c-Si:H薄膜中的作用。通过原位发射光谱(OES)、x射线光电子能谱(XPS)和傅里叶变换红外吸收(FTIR)测量结果，可以确定/spl μ /c-Si:H薄膜中存在的氧具有不同的键合模式，即Si-O键、O-H键和O-O键。此外，通过拉曼光谱、电导率(/spl sigma/)和有功能(E/sub a/)测量，研究了氧对薄膜结构和电性能的影响。结果表明，/spl mu/c-Si:H薄膜的结构性能与现有氧的成键模式密切相关，电学性能尤其表明，氧在/spl mu/c-Si:H薄膜中的作用不同于在a-Si:H薄膜中的作用，其基本机制有待进一步探讨。

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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

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