27.5%效率的InGaP/InGaAs/Ge先进三结(ATJ)空间太阳能电池，用于大批量生产

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190700

M. Stan, D. Aiken, P. Sharps, N. Fatemi, F. Spadafora, J. Hills, H. Yoo, B. Clevenger

{"title":"27.5%效率的InGaP/InGaAs/Ge先进三结(ATJ)空间太阳能电池，用于大批量生产","authors":"M. Stan, D. Aiken, P. Sharps, N. Fatemi, F. Spadafora, J. Hills, H. Yoo, B. Clevenger","doi":"10.1109/PVSC.2002.1190700","DOIUrl":null,"url":null,"abstract":"Results of improvements in Emcore's large-area ( a 26.6 cm/sup 2/) triple-junction (3J) space solar cells are presented. Volume production of this InGaP/InGaAs/Ge advanced triple-junction (ATJ) process shows an individual cell average conversion efficiency of 27.5% (AMO, 135.3 mW/cm, 28/spl deg/C) with observed lot average conversion efficiencies greater than 28.0%. The ATJ cells maintain a radiation hard design similar to that used in the first generation Emcore 3J solar cells. The power remaining factors after irradiation with 1-MeV electrons at fluences of 5E14, 1E15, and 5E15 e/ cm/sup 2/ are 0.89, 0.85,and 0.74 respectively. The realized improvements in the ATJ solar cell have resulted in part from an improved \"blue\" response in the Ge subcell, the addition of indium to the GaAs middle cell composition, and from improvements to the bulk material quality of the InGaP top cell.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"27.5% efficiency InGaP/InGaAs/Ge advanced triple junction (ATJ) space solar cells for high volume manufacturing\",\"authors\":\"M. Stan, D. Aiken, P. Sharps, N. Fatemi, F. Spadafora, J. Hills, H. Yoo, B. Clevenger\",\"doi\":\"10.1109/PVSC.2002.1190700\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Results of improvements in Emcore's large-area ( a 26.6 cm/sup 2/) triple-junction (3J) space solar cells are presented. Volume production of this InGaP/InGaAs/Ge advanced triple-junction (ATJ) process shows an individual cell average conversion efficiency of 27.5% (AMO, 135.3 mW/cm, 28/spl deg/C) with observed lot average conversion efficiencies greater than 28.0%. The ATJ cells maintain a radiation hard design similar to that used in the first generation Emcore 3J solar cells. The power remaining factors after irradiation with 1-MeV electrons at fluences of 5E14, 1E15, and 5E15 e/ cm/sup 2/ are 0.89, 0.85,and 0.74 respectively. The realized improvements in the ATJ solar cell have resulted in part from an improved \\\"blue\\\" response in the Ge subcell, the addition of indium to the GaAs middle cell composition, and from improvements to the bulk material quality of the InGaP top cell.\",\"PeriodicalId\":177538,\"journal\":{\"name\":\"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2002.1190700\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2002.1190700","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 19

摘要

介绍了Emcore的大面积(26.6 cm/sup 2/)三结(3J)空间太阳能电池的改进结果。这种InGaP/InGaAs/Ge先进三结(ATJ)工艺的量产表明，单个电池的平均转换效率为27.5% (AMO, 135.3 mW/cm, 28/spl度/C)，观察到的批次平均转换效率大于28.0%。ATJ电池保持了与第一代Emcore 3J太阳能电池类似的抗辐射设计。在5E14、1E15和5E15 e/ cm/sup 2/的影响下，1 mev电子辐照后的剩余功率因子分别为0.89、0.85和0.74。在ATJ太阳能电池中实现的改进部分是由于Ge亚电池中“蓝色”响应的改进，在GaAs中间电池成分中添加了铟，以及InGaP顶部电池的大块材料质量的改进。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

27.5% efficiency InGaP/InGaAs/Ge advanced triple junction (ATJ) space solar cells for high volume manufacturing

Results of improvements in Emcore's large-area ( a 26.6 cm/sup 2/) triple-junction (3J) space solar cells are presented. Volume production of this InGaP/InGaAs/Ge advanced triple-junction (ATJ) process shows an individual cell average conversion efficiency of 27.5% (AMO, 135.3 mW/cm, 28/spl deg/C) with observed lot average conversion efficiencies greater than 28.0%. The ATJ cells maintain a radiation hard design similar to that used in the first generation Emcore 3J solar cells. The power remaining factors after irradiation with 1-MeV electrons at fluences of 5E14, 1E15, and 5E15 e/ cm/sup 2/ are 0.89, 0.85,and 0.74 respectively. The realized improvements in the ATJ solar cell have resulted in part from an improved "blue" response in the Ge subcell, the addition of indium to the GaAs middle cell composition, and from improvements to the bulk material quality of the InGaP top cell.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

自引率

0.00%

发文量