共溅射Cd/sub 2/SnO/sub 4/薄膜作为CdTe太阳能电池的前触点

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190639

R. Mamazza, S. Yu, D. Morel, C. Ferekides

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引用次数: 1

摘要

从材料的角度和应用的角度研究了Cd/sub 2/SnO/sub 4/薄膜，并将其掺入CdTe基太阳能电池中。以CdO和SnO/sub - 2为靶材，采用共溅射法制备了Cd/sub - 2/SnO/sub - 4/。获得的最低电阻率为2.01/spl times/10/sup -4/ /spl Omega/-cm，迁移率为29.2 cm/sup 2//V/s，载流子浓度为8.47 /spl times/10/sup 20/ cm/sup -3/。对于同一样品，在可见光和近红外光谱(400-900nm)上的平均透射率超过90%。采用Cd/sub 2/SnO/sub 4/作为薄膜CdTe太阳能电池的前触点时，获得了V/sub oc/ s大于840 mV, J/sub sc/ s大于23 mA/cm/sup 2/， ff's大于68.0%，迄今为止的最佳效率为14.0%。

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Co-sputtered Cd/sub 2/SnO/sub 4/ films as front contacts for CdTe solar cells

Cd/sub 2/SnO/sub 4/ thin films were investigated from a materials point of view as well as from an application point of view through their incorporation into CdTe based solar cells. Cd/sub 2/SnO/sub 4/ was deposited by co-sputtering from CdO and SnO/sub 2/ targets. The lowest resistivity achieved was 2.01/spl times/10/sup -4/ /spl Omega/-cm with a mobility of 29.2 cm/sup 2//V/s and a carrier concentration of 8.47 /spl times/ 10/sup 20/ cm/sup -3/. For this same sample the average transmission was over 90% over the visible and near IR spectrum (400-900nm). When Cd/sub 2/SnO/sub 4/ were used as part of the front contact in thin film CdTe solar cells V/sub oc/'s over 840 mV, J/sub sc/'s over 23 mA/cm/sup 2/, and ff's over 68.0% were obtained with the best to-date efficiency being 14.0%.

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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

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