2009 IEEE International Conference on Microelectronic Test Structures最新文献_第2页

Non-Contact, Pad-less Measurement Technology and Test Structures for Characterization of Cross-Wafer and In-Die Product Variability 跨晶圆和模内产品可变性表征的非接触、无衬垫测量技术和测试结构

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI: 10.1109/ICMTS.2009.4814617

G. Steinbrueck, J. Vickers, M. Babazadeh, M. Pelella, N. Pakdaman

{"title":"Non-Contact, Pad-less Measurement Technology and Test Structures for Characterization of Cross-Wafer and In-Die Product Variability","authors":"G. Steinbrueck, J. Vickers, M. Babazadeh, M. Pelella, N. Pakdaman","doi":"10.1109/ICMTS.2009.4814617","DOIUrl":"https://doi.org/10.1109/ICMTS.2009.4814617","url":null,"abstract":"Monitoring and controlling cross-wafer and in-die variability has been recognized as the dominant and escalating factors for the successful commercialization of modern-day integrated circuit products utilizing advanced semiconductor manufacturing[1,2]. In this paper we present a Performance Based Metrology (PBM), a measurement technology for closing the information gap between the design, process integration, and manufacturing groups with respect to accounting for variability. PBM enables the \"porting\" of scribe-like and end-of-line contact tested measurements to within the product die active area to it provide the capability to significantly reduce the cycles of learning to obtain relevant and key process, device, and product metrics. This product-relevant information can then be used for process monitoring and control, performance optimization, and to enhance early bin-yield predictability. The technique would reduce or eliminate the need for send-ahead test wafers and other \"disruptive\" measurements by making possible in-die, non-contact characterization of product performance monitors and devices. We describe the in-line measurement system and review the design and implementation considerations for the non-contact test structures incorporated on product wafers. Experimental results from PBM measurements on several generations (90, 65, and 45nm) of bulk-Si and SOI product wafers and devices are presented to illustrate the capabilities of the technique.","PeriodicalId":175818,"journal":{"name":"2009 IEEE International Conference on Microelectronic Test Structures","volume":"358 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122733091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Array Test Structure for Ultra-Thin Gate Oxide Degradation Issues 超薄栅极氧化物降解问题的阵列测试结构

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI: 10.1109/ICMTS.2009.4814616

K. M. Hafkemeyer, A. Domdey, D. Schroeder, W. Krautschneider

引用次数: 2

Estimating MOSFET Leakage from Low-cost, Low-resolution Fast Parametric Test 从低成本、低分辨率的快速参数测试中估计MOSFET泄漏

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI: 10.1109/ICMTS.2009.4814623

S. Saxena, T. Uezono, R. Vallishayee, R. Lindley, A. Swimmer, S. Winters

引用次数: 1

High precision on-wafer backend capacitor mismatch measurements using a benchtop semiconductor characterization system 高精度晶圆后端电容器失配测量使用台式半导体表征系统

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI: 10.1109/ICMTS.2009.4814598

H. Tuinhout, F. van Rossem, N. Wils

引用次数: 16

Test Structure to Extract Circuit Models of Nanostructures Operating at High Frequencies 测试结构提取高频工作的纳米结构电路模型

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI: 10.1109/ICMTS.2009.4814605

F. Madriz, J. Jameson, S. Krishnan, Xuhui Sun, Cary Y. Yang

引用次数: 6

A Test Structure for Statistical Evaluation of Characteristics Variability in a Very Large Number of MOSFETs 一种用于统计评估大量mosfet特性变异性的测试结构

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI: 10.1109/ICMTS.2009.4814622

S. Watabe, S. Sugawa, K. Abe, T. Fujisawa, N. Miyamoto, A. Teramoto, T. Ohmi

引用次数: 14

S-Parameter-Based Modal Decomposition of Multiconductor Transmission Lines and Its Application to De-Embedding 基于s参数的多导体输电线路模态分解及其在去埋中的应用

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI: 10.1109/ICMTS.2009.4814635

S. Amakawa, K. Yamanaga, H. Ito, T. Sato, N. Ishihara, K. Masu

引用次数: 10

Fast Embedded Characterization of FEOL Variations in MOS Devices MOS器件中FEOL变化的快速嵌入表征

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI: 10.1109/ICMTS.2009.4814642

F. Rigaud, J. Portal, P. Dreux, J. Vast, H. Aziza, G. Baş

引用次数: 3

Characterization and modeling of mechanical stress in silicon-based devices 硅基器件中机械应力的表征和建模

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI: 10.1109/ICMTS.2009.4814628

A. Spessot, A. Colombi, G. Carnevale, P. Fantini

引用次数: 0

Characterization and Model Parameter Extraction of Symmetrical Centre Tapped Inductor using Build in Mixed Mode and Pure Differential S-Parameters 基于内置混合模式和纯微分s参数的对称中心抽头电感表征及模型参数提取

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI: 10.1109/ICMTS.2009.4814636

F. Gianesello, Y. Morandini, S. Boret, D. Gloria

{"title":"Characterization and Model Parameter Extraction of Symmetrical Centre Tapped Inductor using Build in Mixed Mode and Pure Differential S-Parameters","authors":"F. Gianesello, Y. Morandini, S. Boret, D. Gloria","doi":"10.1109/ICMTS.2009.4814636","DOIUrl":"https://doi.org/10.1109/ICMTS.2009.4814636","url":null,"abstract":"With the continuous reduction of the gate length, the cut off frequency of the active devices in CMOS technology has exceeded 200 GHz [1]. In addition, CMOS possesses the capability to integrate transceiver with the baseband circuits. Thus, CMOS technology seems to be an attractive candidate for low-gigahertz (5 GHz) radio frequency (RF) applications [2] and even millimetre wave one [3]. Then, monolithic inductors have become an important component in highly integrated radio frequency circuits (RF ICs) for wireless communication systems such as personal communication services, wireless local area networks, satellite communications, and the global positioning system. It is well known that exciting a spiral inductor differentially, using a source connected between the two ends of the inductor, the peak Q-factor shows a significant increase, and this high Q value is maintained over a broader bandwidth [4] compared to single-ended excitation. Up to now, differential characterization of symmetrical inductor has been performed using classical single ended S-parameters [5], and assuming linearity and electrical symmetry hypothesis, mixed mode Sparameters are then computed and differential quality factor extracted. In this paper, for the first time using recently available vector network analyzer capable of delivering true differential signal, PNA-X from Agilent, we will verify this hypothesis discussing dedicated differential test structure and methodology. Moreover, from the modelling side new perspective will be proposed in order to take advantage of mixed mode S-parameters to extract new parameter such as self mutual inductance.","PeriodicalId":175818,"journal":{"name":"2009 IEEE International Conference on Microelectronic Test Structures","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114434960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1