Test Structure to Extract Circuit Models of Nanostructures Operating at High Frequencies

F. Madriz, J. Jameson, S. Krishnan, Xuhui Sun, Cary Y. Yang
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引用次数: 6

Abstract

We describe a test structure optimized for studying high-frequency electrical transport in 1-D nanoscale systems. The test structure exhibits lower transmission than previously reported structures, enabling capacitances less than 1 fF to be detected in the frequency response of the nanoscale system. The scattering parameters (S-parameters) of the test structure are describable to within ±0.5dB and ±2° from 0.1 to 50 GHz using a simple lumped-element RC circuit model whose elements are all measured experimentally.
测试结构提取高频工作的纳米结构电路模型
我们描述了一个优化的测试结构,用于研究一维纳米级系统中的高频电输运。测试结构显示出比先前报道的结构更低的透射率,使得在纳米级系统的频率响应中可以检测到小于1ff的电容。采用简单的集总单元RC电路模型,在0.1 ~ 50 GHz范围内,测试结构的散射参数(s参数)在±0.5dB和±2°范围内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
0.80
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