测试结构提取高频工作的纳米结构电路模型

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI:10.1109/ICMTS.2009.4814605

F. Madriz, J. Jameson, S. Krishnan, Xuhui Sun, Cary Y. Yang

{"title":"测试结构提取高频工作的纳米结构电路模型","authors":"F. Madriz, J. Jameson, S. Krishnan, Xuhui Sun, Cary Y. Yang","doi":"10.1109/ICMTS.2009.4814605","DOIUrl":null,"url":null,"abstract":"We describe a test structure optimized for studying high-frequency electrical transport in 1-D nanoscale systems. The test structure exhibits lower transmission than previously reported structures, enabling capacitances less than 1 fF to be detected in the frequency response of the nanoscale system. The scattering parameters (S-parameters) of the test structure are describable to within ±0.5dB and ±2° from 0.1 to 50 GHz using a simple lumped-element RC circuit model whose elements are all measured experimentally.","PeriodicalId":175818,"journal":{"name":"2009 IEEE International Conference on Microelectronic Test Structures","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Test Structure to Extract Circuit Models of Nanostructures Operating at High Frequencies\",\"authors\":\"F. Madriz, J. Jameson, S. Krishnan, Xuhui Sun, Cary Y. Yang\",\"doi\":\"10.1109/ICMTS.2009.4814605\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe a test structure optimized for studying high-frequency electrical transport in 1-D nanoscale systems. The test structure exhibits lower transmission than previously reported structures, enabling capacitances less than 1 fF to be detected in the frequency response of the nanoscale system. The scattering parameters (S-parameters) of the test structure are describable to within ±0.5dB and ±2° from 0.1 to 50 GHz using a simple lumped-element RC circuit model whose elements are all measured experimentally.\",\"PeriodicalId\":175818,\"journal\":{\"name\":\"2009 IEEE International Conference on Microelectronic Test Structures\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2009.4814605\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2009.4814605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

我们描述了一个优化的测试结构，用于研究一维纳米级系统中的高频电输运。测试结构显示出比先前报道的结构更低的透射率，使得在纳米级系统的频率响应中可以检测到小于1ff的电容。采用简单的集总单元RC电路模型，在0.1 ~ 50 GHz范围内，测试结构的散射参数(s参数)在±0.5dB和±2°范围内。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Test Structure to Extract Circuit Models of Nanostructures Operating at High Frequencies

We describe a test structure optimized for studying high-frequency electrical transport in 1-D nanoscale systems. The test structure exhibits lower transmission than previously reported structures, enabling capacitances less than 1 fF to be detected in the frequency response of the nanoscale system. The scattering parameters (S-parameters) of the test structure are describable to within ±0.5dB and ±2° from 0.1 to 50 GHz using a simple lumped-element RC circuit model whose elements are all measured experimentally.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 IEEE International Conference on Microelectronic Test Structures

CiteScore

0.80

自引率

0.00%

发文量