High precision on-wafer backend capacitor mismatch measurements using a benchtop semiconductor characterization system

Abstract

This paper discusses a sophisticated backend capacitor mismatch characterization technique based on direct capacitance measurements with a standard C-V meter, wafer prober subsite moves to measure the two capacitors of each pair sequentially and monitor the measurement noise, and statistics to take this noise appropriately into account. We describe requirements, capabilities and limitations of this approach. It is concluded that this technique proves excellently suited for assessing the matching performance of backend capacitors in the most relevant range of 10 fF to 10 pF.