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Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)最新文献

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A simple and flexible driver for OLED 一种简单而灵活的OLED驱动器
Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI: 10.1109/ASID.1999.762734
S. Xiong, Weiliang Xie, Ying Zhao, Junsong Wang, Enfeng Liu, Chunya Wu
{"title":"A simple and flexible driver for OLED","authors":"S. Xiong, Weiliang Xie, Ying Zhao, Junsong Wang, Enfeng Liu, Chunya Wu","doi":"10.1109/ASID.1999.762734","DOIUrl":"https://doi.org/10.1109/ASID.1999.762734","url":null,"abstract":"A microcontroller-based driver was designed and developed for dot-matrix displays made with organic light emitting diodes (OLEDs). It was made by modifying driver designed for dot matrix LEDs made with inorganic semiconductors. The driver was designed with adjustable driving frequency, pulse-width, polarity and pulse-amplitude. It is a generalized driver suitable for operating OLED dot matrices made with different electroluminescent organic materials or in different device structures. A driver system was fabricated to drive an OLED panel in 40/spl times/7 format.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126102603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Laser doping technique for II-VI semiconductors, ZnSe and CdTe II-VI半导体、ZnSe和CdTe的激光掺杂技术
Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI: 10.1109/ASID.1999.762715
Y. Hatanaka, T. Aoki, M. Niraula, Y. Aoki, Y. Nakanishi
{"title":"Laser doping technique for II-VI semiconductors, ZnSe and CdTe","authors":"Y. Hatanaka, T. Aoki, M. Niraula, Y. Aoki, Y. Nakanishi","doi":"10.1109/ASID.1999.762715","DOIUrl":"https://doi.org/10.1109/ASID.1999.762715","url":null,"abstract":"The p-type doping of wide band gap II-VI semiconductors is a key technology for the formation of ohmic contacts with metal electrodes in device fabrication. Using alkaline metal compounds such as Na/sub 2/Se or Na/sub 2/Te which contain dopant atoms, laser doping experiments were carried out for ZnSe and CdTe. The influences of laser light treatment on the electrical properties of semiconductors were studied mainly by means of the Hall effect measurements and current-voltage (I-V) characteristics. As a result of p-type doping, the resistivity of ZnSe drastically decreased from 10/sup 5/ to 10/sup -2/ /spl Omega/ cm and the value of hole carrier concentration increased up to 4.8/spl times/10/sup 19/ cm/sup -3/. CdTe the resistivity decreased from 10/sup 5/ to 10/sup -1/ /spl Omega/ cm. Formation of p-type ohmic contact in ZnSe and CdTe diodes was also investigated.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128943339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of stacks of reflective cholesteric films for full color displays 用于全彩显示的反射胆甾膜堆的优化
Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI: 10.1109/ASID.1999.762706
J. West, V. Bodnar
{"title":"Optimization of stacks of reflective cholesteric films for full color displays","authors":"J. West, V. Bodnar","doi":"10.1109/ASID.1999.762706","DOIUrl":"https://doi.org/10.1109/ASID.1999.762706","url":null,"abstract":"Researchers from Kent Displays recently demonstrated, bright, full color, reflective displays using stacks of red, green and blue reflecting cholesteric films. We examined the factors affecting the brightness of these stacked displays. We measured the reflectivity of the individual films and of two and three layer stacks. We found that the reflectivity depends on the order of the stacks, being maximized when films reflecting at shorter wavelengths are placed on top. It appears that the effect of the order of the stack results from the asymmetric reflection of films; the reflection curves have a long tail on the shorter wavelength side of the reflection maximum. This tail may result in multiple reflection, reducing the overall brightness of the display if films reflecting at longer wavelengths are place closer to the observer and the light source. We have also found that the reflectivity is maximized if the twist sense of the layers is alternated. Maximum reflection in a three-layer stack, required for full color, is produced with a blue reflecting film on top, a green reflecting film in the middle and a red reflecting film on the bottom. Reflection is also optimized when the middle green film has the opposite twist sense of the blue and red films.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134055593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A high contrast and high brightness reflective LCD with an internal diffusive reflector 具有内部漫射反射器的高对比度和高亮度反射LCD
Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI: 10.1109/ASID.1999.762709
Dai‐Liang Ting, Chung-Yuan Liu, J. Shiu, Wei-Chih Chang, Hung-Ta Wei, C.‐J. Wen
{"title":"A high contrast and high brightness reflective LCD with an internal diffusive reflector","authors":"Dai‐Liang Ting, Chung-Yuan Liu, J. Shiu, Wei-Chih Chang, Hung-Ta Wei, C.‐J. Wen","doi":"10.1109/ASID.1999.762709","DOIUrl":"https://doi.org/10.1109/ASID.1999.762709","url":null,"abstract":"We have developed a high contrast and high brightness reflective LCD with an internal diffusive reflector (IDR). The IDR is used in a single-polarizer configuration using mixed-mode twisted nematic (MTN) effect. The diffusive reflector, with proper design, is effective in yielding a bright reflective-image under collimated ambient light. The MTN mode is adopted for its high contrast and large tolerance to cell gap variation. The test cell shows contrast ratio over 40:1, response time less than 20 ms and reflectivity of 22% (when combined with micro color filters) relative to a Lambertian standard white, measured at display's normal direction under -30/spl deg/ collimated illumination.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134189798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effect of deposition temperature of SiN/sub x//a-Si/n/sup +/a-Si films by monochamber PECVD processing on a-Si TFT electrical characteristics and stability 单室PECVD沉积SiN/sub x//a-Si/n/sup +/a-Si薄膜温度对a-Si TFT电特性及稳定性的影响
Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI: 10.1109/ASID.1999.762724
H. Lin, Y. Chen
{"title":"Effect of deposition temperature of SiN/sub x//a-Si/n/sup +/a-Si films by monochamber PECVD processing on a-Si TFT electrical characteristics and stability","authors":"H. Lin, Y. Chen","doi":"10.1109/ASID.1999.762724","DOIUrl":"https://doi.org/10.1109/ASID.1999.762724","url":null,"abstract":"Effect of deposition temperature of monochamber PECVD processing on a-Si TFT electrical characteristics and stability has been investigated. The experimental results show that (1) TFTs deposited at 280/spl deg/C have higher mobility than the TFTs deposited with other temperature; (2) TFTs deposited with higher temperature have better stability against voltage stressing. When we deposited SiN/sub x// a-Si/n+a-Si films by monochamber PECVD processing at 280/spl deg/C, a-Si:H TFTs have higher mobility and better capability against voltage stressing.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128743158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of excimer laser annealing through oxide 准分子激光通过氧化物退火的影响
Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI: 10.1109/ASID.1999.762723
Hsing-Ju Sung, I. Lu, Shih-chang Chang
{"title":"Effect of excimer laser annealing through oxide","authors":"Hsing-Ju Sung, I. Lu, Shih-chang Chang","doi":"10.1109/ASID.1999.762723","DOIUrl":"https://doi.org/10.1109/ASID.1999.762723","url":null,"abstract":"We investigated the effects of the crystallization of a-Si film with a capping oxide by 308 nm XeCl excimer laser. It is related to the process of impurity activation after ion doping and the uniformity improvement of excimer laser crystallization through oxide. The 50 nm PECVD a-Si film was deposited on PECVD oxide with a thickness of 300 nm. Then the sample was heated to reduce the hydrogen content in the a-Si thin film. A PECVD oxide was deposited on the dehydrogenated a-Si layer. The thickness of capping oxide ranges from 100 nm to 400 nm. When a capping oxide was used as a hard mask for ion doping or suppressing the deviation of laser energy, the thickness of capping oxide plays an important role in the laser activation or crystallization process. In this study we discuss the effect of the thickness of capping oxide on the laser crystallization or activation process. Good correlation between the interference effect (capping oxide thickness) and laser crystallized film quality was observed.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129364519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Residual gas analysis on different process stages in cathode ray tubes 阴极射线管不同工艺阶段的残余气体分析
Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-17 DOI: 10.1109/ASID.1999.762756
Chao Chen, K. Chou, C. Mo, C. H. Tseng, K. Chen, C. Carretti, M. Guastalla
{"title":"Residual gas analysis on different process stages in cathode ray tubes","authors":"Chao Chen, K. Chou, C. Mo, C. H. Tseng, K. Chen, C. Carretti, M. Guastalla","doi":"10.1109/ASID.1999.762756","DOIUrl":"https://doi.org/10.1109/ASID.1999.762756","url":null,"abstract":"An experimental measurement of the effects of oxygen, water, carbon dioxide, methane, hydrogen and helium gases on the different process stages of the cathode ray tube are presented. Using the residual gas analysis results, exhaust timing, getter flashing, and emission aging could be adjusted for obtaining an optimal process control. The tube size of 15 inch and 17 inch are measured in this study. The test procedure, the experimental set-up, and the analysis results are proposed. The methodology of the measuring program could be constructed for future study and assurance of the quality on the different process stages could be obtained.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125043792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurement on the modulation depth of moire and spot size [CRT display] 云纹调制深度及光斑尺寸的测量[CRT显示]
Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-17 DOI: 10.1109/ASID.1999.762759
Cho-Liang Liang
{"title":"Measurement on the modulation depth of moire and spot size [CRT display]","authors":"Cho-Liang Liang","doi":"10.1109/ASID.1999.762759","DOIUrl":"https://doi.org/10.1109/ASID.1999.762759","url":null,"abstract":"It is known that moire is the counterpart of readability/focus performance. Nowadays, the requirement on the readability of a CDT is getting higher and forces the gun designers to make the beam spot smaller and smaller. This makes moire inevitable under certain application conditions, because the visibility of the moire pattern is determined by the electron beam spot, while the structure of mask aperture determines moire wavelength. This paper is devoted to the study of the relationship between the visibility of scan moire and spot size from measurements. The modulation depth (MD) of moire and the electron beam spot are measured by a CCD camera. By varying the horizontal Dynamic Astigmatism and Focus (DAF) voltage, the variations of moire MD with beam spot are acquired. It is found that the spot size at both 5% and 50% of luminance distribution can characterize the moire MD in agreement with theoretical calculation.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114348799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bipolar behavior in a near UV electroluminescent silicon polymer 近紫外电致发光硅聚合物的双极行为
Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-17 DOI: 10.1109/ASID.1999.762705
K. Furukawa, C. Yuan, S. Hoshino, H. Suzuki, N. Matsumoto
{"title":"Bipolar behavior in a near UV electroluminescent silicon polymer","authors":"K. Furukawa, C. Yuan, S. Hoshino, H. Suzuki, N. Matsumoto","doi":"10.1109/ASID.1999.762705","DOIUrl":"https://doi.org/10.1109/ASID.1999.762705","url":null,"abstract":"To better understand the transport behavior of carriers in polymer LEDs, a near-ultraviolet electroluminescent polymer, poly[bis(p-butylphenyl)silane] was investigated by means of time-of-flight method. The signal of carrier migration was detected when pulsed coherent light at 387 nm was illuminated on the high electric field charged polymer thin film. It shows a hole drift mobility of 1/spl times/10/sup -4/ cm/sup 2//Vs, a typical phenomenon often observed in polysilanes. For an oppositely charged polymer film, an intense signal appeared although there was no indication of electron migration. It strongly suggests that electrons are readily injected into the polymer film. Thus, the bipolar nature of the described polymer facilitates the injection of electrons and holes into the polymer matrix and leads to the occurrence of an efficient electroluminescence in spite of a single-layer diode structure.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124519351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of mask design [CRT] 掩模设计仿真[CRT]
Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-17 DOI: 10.1109/ASID.1999.762753
Wen-Chi Chen, Chun-Hung Lu, Ching-Hsiang Tseng
{"title":"Simulation of mask design [CRT]","authors":"Wen-Chi Chen, Chun-Hung Lu, Ching-Hsiang Tseng","doi":"10.1109/ASID.1999.762753","DOIUrl":"https://doi.org/10.1109/ASID.1999.762753","url":null,"abstract":"A simulation program of CRT design, specially focused on mask design, is proposed in the present study. Incorporating the back-tracing results of the exposure system along with three-dimensional spatial geometric relations, the weighted least square method is applied to solve the characteristics of each R-G-B trio in full screen. The nesting arrangement for full screen is obtained by setting a flat mask pattern, included as horizontal/vertical pitches and aperture size. In the same manner, the landing distribution of electron beam could be found by inputting the magnitude of misregistrations. The improvement of mask design is judged according to the increase in the guard-band of nesting distribution. A Graphic User Interface (GUI) is another target in this work. Within the GUI environment, design engineers can comfortably operate the simulation system to input mentioned design parameters, such as: flat mask pattern, formed mask geometry, q spacing, etc. Also, the simulation results, both for the R-G-B trio and nesting arrangement, can be shown graphically.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132875962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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