Effect of deposition temperature of SiN/sub x//a-Si/n/sup +/a-Si films by monochamber PECVD processing on a-Si TFT electrical characteristics and stability

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI:10.1109/ASID.1999.762724

H. Lin, Y. Chen

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Abstract

Effect of deposition temperature of monochamber PECVD processing on a-Si TFT electrical characteristics and stability has been investigated. The experimental results show that (1) TFTs deposited at 280/spl deg/C have higher mobility than the TFTs deposited with other temperature; (2) TFTs deposited with higher temperature have better stability against voltage stressing. When we deposited SiN/sub x// a-Si/n+a-Si films by monochamber PECVD processing at 280/spl deg/C, a-Si:H TFTs have higher mobility and better capability against voltage stressing.

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单室PECVD沉积SiN/sub x//a-Si/n/sup +/a-Si薄膜温度对a-Si TFT电特性及稳定性的影响

研究了单室PECVD工艺沉积温度对a-Si TFT电特性和稳定性的影响。实验结果表明:(1)在280/spl℃下沉积的tft迁移率高于其他温度下沉积的tft;(2)温度越高，TFTs的抗电压应力稳定性越好。当我们在280/spl℃的单室PECVD条件下沉积SiN/sub x// a-Si/n+a-Si薄膜时，a-Si:H tft具有更高的迁移率和更好的抗电压应力能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)

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