单室PECVD沉积SiN/sub x//a-Si/n/sup +/a-Si薄膜温度对a-Si TFT电特性及稳定性的影响

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI:10.1109/ASID.1999.762724

H. Lin, Y. Chen

{"title":"单室PECVD沉积SiN/sub x//a-Si/n/sup +/a-Si薄膜温度对a-Si TFT电特性及稳定性的影响","authors":"H. Lin, Y. Chen","doi":"10.1109/ASID.1999.762724","DOIUrl":null,"url":null,"abstract":"Effect of deposition temperature of monochamber PECVD processing on a-Si TFT electrical characteristics and stability has been investigated. The experimental results show that (1) TFTs deposited at 280/spl deg/C have higher mobility than the TFTs deposited with other temperature; (2) TFTs deposited with higher temperature have better stability against voltage stressing. When we deposited SiN/sub x// a-Si/n+a-Si films by monochamber PECVD processing at 280/spl deg/C, a-Si:H TFTs have higher mobility and better capability against voltage stressing.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of deposition temperature of SiN/sub x//a-Si/n/sup +/a-Si films by monochamber PECVD processing on a-Si TFT electrical characteristics and stability\",\"authors\":\"H. Lin, Y. Chen\",\"doi\":\"10.1109/ASID.1999.762724\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effect of deposition temperature of monochamber PECVD processing on a-Si TFT electrical characteristics and stability has been investigated. The experimental results show that (1) TFTs deposited at 280/spl deg/C have higher mobility than the TFTs deposited with other temperature; (2) TFTs deposited with higher temperature have better stability against voltage stressing. When we deposited SiN/sub x// a-Si/n+a-Si films by monochamber PECVD processing at 280/spl deg/C, a-Si:H TFTs have higher mobility and better capability against voltage stressing.\",\"PeriodicalId\":170859,\"journal\":{\"name\":\"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASID.1999.762724\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASID.1999.762724","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了单室PECVD工艺沉积温度对a-Si TFT电特性和稳定性的影响。实验结果表明:(1)在280/spl℃下沉积的tft迁移率高于其他温度下沉积的tft;(2)温度越高，TFTs的抗电压应力稳定性越好。当我们在280/spl℃的单室PECVD条件下沉积SiN/sub x// a-Si/n+a-Si薄膜时，a-Si:H tft具有更高的迁移率和更好的抗电压应力能力。

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Effect of deposition temperature of SiN/sub x//a-Si/n/sup +/a-Si films by monochamber PECVD processing on a-Si TFT electrical characteristics and stability

Effect of deposition temperature of monochamber PECVD processing on a-Si TFT electrical characteristics and stability has been investigated. The experimental results show that (1) TFTs deposited at 280/spl deg/C have higher mobility than the TFTs deposited with other temperature; (2) TFTs deposited with higher temperature have better stability against voltage stressing. When we deposited SiN/sub x// a-Si/n+a-Si films by monochamber PECVD processing at 280/spl deg/C, a-Si:H TFTs have higher mobility and better capability against voltage stressing.

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Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)

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