Laser doping technique for II-VI semiconductors, ZnSe and CdTe

Abstract

The p-type doping of wide band gap II-VI semiconductors is a key technology for the formation of ohmic contacts with metal electrodes in device fabrication. Using alkaline metal compounds such as Na/sub 2/Se or Na/sub 2/Te which contain dopant atoms, laser doping experiments were carried out for ZnSe and CdTe. The influences of laser light treatment on the electrical properties of semiconductors were studied mainly by means of the Hall effect measurements and current-voltage (I-V) characteristics. As a result of p-type doping, the resistivity of ZnSe drastically decreased from 10/sup 5/ to 10/sup -2/ /spl Omega/ cm and the value of hole carrier concentration increased up to 4.8/spl times/10/sup 19/ cm/sup -3/. CdTe the resistivity decreased from 10/sup 5/ to 10/sup -1/ /spl Omega/ cm. Formation of p-type ohmic contact in ZnSe and CdTe diodes was also investigated.