Simulation of mask design [CRT]

Wen-Chi Chen, Chun-Hung Lu, Ching-Hsiang Tseng
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Abstract

A simulation program of CRT design, specially focused on mask design, is proposed in the present study. Incorporating the back-tracing results of the exposure system along with three-dimensional spatial geometric relations, the weighted least square method is applied to solve the characteristics of each R-G-B trio in full screen. The nesting arrangement for full screen is obtained by setting a flat mask pattern, included as horizontal/vertical pitches and aperture size. In the same manner, the landing distribution of electron beam could be found by inputting the magnitude of misregistrations. The improvement of mask design is judged according to the increase in the guard-band of nesting distribution. A Graphic User Interface (GUI) is another target in this work. Within the GUI environment, design engineers can comfortably operate the simulation system to input mentioned design parameters, such as: flat mask pattern, formed mask geometry, q spacing, etc. Also, the simulation results, both for the R-G-B trio and nesting arrangement, can be shown graphically.
掩模设计仿真[CRT]
本文提出了一种针对阴极射线管掩模设计的仿真程序。结合曝光系统的反向追踪结果,结合三维空间几何关系,采用加权最小二乘法求解全屏下各R-G-B三联体的特征。通过设置平面掩模图案获得全屏嵌套排列,包括水平/垂直间距和孔径大小。同样,通过输入错配的大小,可以得到电子束的落地分布。根据嵌套分布的保护带的增加来判断掩模设计的改进。图形用户界面(GUI)是这项工作的另一个目标。在GUI环境中,设计工程师可以轻松地操作仿真系统输入上述设计参数,如:平面掩模图案、成形掩模几何形状、q间距等。此外,R-G-B三重奏和嵌套排列的仿真结果都可以用图形显示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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