II-VI半导体、ZnSe和CdTe的激光掺杂技术

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI:10.1109/ASID.1999.762715

Y. Hatanaka, T. Aoki, M. Niraula, Y. Aoki, Y. Nakanishi

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引用次数: 0

摘要

宽禁带II-VI半导体的p型掺杂是器件制造中与金属电极形成欧姆接触的关键技术。利用含有掺杂原子的Na/sub 2/Se或Na/sub 2/Te等碱金属化合物，对ZnSe和CdTe进行了激光掺杂实验。本文主要通过霍尔效应测量和电流-电压(I-V)特性研究了激光处理对半导体电性能的影响。p型掺杂使ZnSe的电阻率从10/sup 5/急剧下降到10/sup -2/ /spl ω / cm，空穴载流子浓度增加到4.8/spl倍/10/sup 19/ cm/sup -3/。CdTe的电阻率由10/sup 5/降至10/sup -1/ spl ω / cm。还研究了ZnSe和CdTe二极管中p型欧姆接触的形成。

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Laser doping technique for II-VI semiconductors, ZnSe and CdTe

The p-type doping of wide band gap II-VI semiconductors is a key technology for the formation of ohmic contacts with metal electrodes in device fabrication. Using alkaline metal compounds such as Na/sub 2/Se or Na/sub 2/Te which contain dopant atoms, laser doping experiments were carried out for ZnSe and CdTe. The influences of laser light treatment on the electrical properties of semiconductors were studied mainly by means of the Hall effect measurements and current-voltage (I-V) characteristics. As a result of p-type doping, the resistivity of ZnSe drastically decreased from 10/sup 5/ to 10/sup -2/ /spl Omega/ cm and the value of hole carrier concentration increased up to 4.8/spl times/10/sup 19/ cm/sup -3/. CdTe the resistivity decreased from 10/sup 5/ to 10/sup -1/ /spl Omega/ cm. Formation of p-type ohmic contact in ZnSe and CdTe diodes was also investigated.

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Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)

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