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2020 International Workshop on Advanced Patterning Solutions (IWAPS)最新文献

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Investigation of A New Method to Weigh the Data Used for OPC Model Calibration 一种新的OPC模型标定数据加权方法的研究
2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286813
Le Ma, Libin Zhang, Liwan Yue, Zhibiao Mao, Yayi Wei, Lisong Dong
{"title":"Investigation of A New Method to Weigh the Data Used for OPC Model Calibration","authors":"Le Ma, Libin Zhang, Liwan Yue, Zhibiao Mao, Yayi Wei, Lisong Dong","doi":"10.1109/IWAPS51164.2020.9286813","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286813","url":null,"abstract":"The OPC (optical proximity correction) models need to be more accurate to simulate and predict the resist contours on the wafer of a specific process. The wafer data used for the calibration of the OPC models has a significant impact on the performance of the OPC models. This paper demonstrated a weighing method for the data to build the OPC model by weighing different data with different weights according to the feature. With the weighing method we put forward, the mean fitting error and rms (root mean square) of OPC model built were reduced.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115078618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoresist for Extreme Ultraviolet Lithography 极紫外光刻用光刻胶
2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286794
Peipei Tao, Li Sheng, Qianqian Wang, Hao Cui, Xiaolin Wang, Xiangming He, Hong Xu
{"title":"Photoresist for Extreme Ultraviolet Lithography","authors":"Peipei Tao, Li Sheng, Qianqian Wang, Hao Cui, Xiaolin Wang, Xiangming He, Hong Xu","doi":"10.1109/IWAPS51164.2020.9286794","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286794","url":null,"abstract":"Lithography enabled nanoscale fabrication in the semiconductor industry, is also the primarily driven force for the microelectronics revolution. In the history of photolithography, scientists have been working on reducing the light wavelength for higher lithographic resolution. With the rapid development of semiconductors, today's 193-nm immersion lithography is approaching its physical limits. Extreme ultra-violet (EUV) lithography with a wavelength of 13.5 nm has been emerged as the most promising candidate to continue Moore's law. However, the dramatic decrease of the wavelength of the light source has brought many technological challenges on both the machine side and the photoresist side for semiconductor high volume manufacturing (HVM). Historically, the invention of chemically amplified resists (CARs) with significantly improved sensitivity had helped overcome the power output challenge of the light source in deep ultra-violet (DUV) lithography. A possible solution for current EUVL challenges is continually developing new photoresists to efficiently absorb the EUV light, even though polymer-based CARs have been widely used for decades. This review discusses the challenges in EUVL and the progress in the EUV photoresists materials, including polymer, molecular glass, and metal-oxide nanoparticles type photoresists. A brief discussion of the development strategies and future challenges for EUV photoresists is also included.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121830273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reducing Systematic Defects using Calibre Wafer Defect Engineering and Machine Learning Solutions 使用Calibre晶圆缺陷工程和机器学习解决方案减少系统缺陷
2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286791
Jet Jiang, Frank Hou, Gavin Li, Summy Chen, Marfei Fei, Qian Xie, Liang Cao, Qijian Wan, Xinyi Hu, Chunshan Du, David Wang, Elven Huang, Sankaranarayanan Paninjath, S. Madhusudhan, Leo Tian
{"title":"Reducing Systematic Defects using Calibre Wafer Defect Engineering and Machine Learning Solutions","authors":"Jet Jiang, Frank Hou, Gavin Li, Summy Chen, Marfei Fei, Qian Xie, Liang Cao, Qijian Wan, Xinyi Hu, Chunshan Du, David Wang, Elven Huang, Sankaranarayanan Paninjath, S. Madhusudhan, Leo Tian","doi":"10.1109/IWAPS51164.2020.9286791","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286791","url":null,"abstract":"As the semiconductor manufacturing continues its march towards more advanced technology nodes, design and process introduced systematic defects become significant yield limiters [1]. Therefore, identification and characterization of these systematic defects becomes increasingly important. The design systematic defect analysis is normally done by combining both inline inspection results and physical layout (design) information. In the full flow, from preparing inspection care area to performing systematic defect root cause analysis, utilizing EDA software plays an important role. Especially with machine learning technique combining with OPC feature vector extraction, we can have a more precise analysis of the weak pattern on wafers. In this paper, we will introduce how we utilize these techniques for Process Window Qualification (PWQ), focus mainly on how we perform BFI to SEM down sampling, and full chip hotspot prediction to verify potential hotspots on PWQ wafer in order to obtain an accurate process window, and identify systematic weak patterns with increased SEM defect hit rate.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124080884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Source Optimization under Thick Mask Model 厚掩模模型下的源优化
2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286817
Yang Liu, Yiyu Sun, Yanqiu Li, Pengzhi Wei, Lihui Liu, Enze Li
{"title":"Source Optimization under Thick Mask Model","authors":"Yang Liu, Yiyu Sun, Yanqiu Li, Pengzhi Wei, Lihui Liu, Enze Li","doi":"10.1109/IWAPS51164.2020.9286817","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286817","url":null,"abstract":"Source optimization(SO) is a key method of resolution enhancement technology. However, as the technique node enters 45 nm and below, the influence of thick mask effect has become apparent. The result of source optimization considering the mask as a thin film is inaccurate. In this paper, we propose a source optimization model considering thick mask structure. We establish the theoretical model of source optimization with gradient method and compressive sensing(CS) method. The typical masks of 45nm, 28nm and 22nm were selected for simulation. The optimized source provides better imaging performance, while the simulation speed has been improved by using CS method.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122811075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Overlay mark sub structure design to improve the contrast 叠层标记子结构设计，提高对比度
2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286790
Libin Zhang, Cong Lu, Yaobin Feng, Yayi Wei, Xiaojing Su, Le Ma, Lisong Dong
{"title":"Overlay mark sub structure design to improve the contrast","authors":"Libin Zhang, Cong Lu, Yaobin Feng, Yayi Wei, Xiaojing Su, Le Ma, Lisong Dong","doi":"10.1109/IWAPS51164.2020.9286790","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286790","url":null,"abstract":"The contrast of image based overlay (IBO) plays an important role during overlay mark metrology. For advanced lithography nodes, it is better to implement sub structures for the IBO mark to make the patterning process friendly. However, the sub structures may decrease the image contrast and lead to metrology errors and challenges of mark recognition for the overlay tools. In this paper, a theoretical analysis was conducted to simulate the IBO marks contrast in relation with different structural designs of the marks. The result provides a potential solution for the IBO contrast enhancement.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123901487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Real time process monitoring using diffraction-based overlay measurements from YieldStar 使用YieldStar基于衍射的叠加测量进行实时过程监控
2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286803
Henry Chen, Jimmy Chang, Sheng-Tsung Tsao, Junjun Zhang, Jie Du, Congcong Fan, Alex Huang, David Xu, Sam Liu, Liang Wu, Kimi Yang, Ning Gu, L. Ren, Jian Wu, A. Tan, Sunny Xia, Ivan Mao
{"title":"Real time process monitoring using diffraction-based overlay measurements from YieldStar","authors":"Henry Chen, Jimmy Chang, Sheng-Tsung Tsao, Junjun Zhang, Jie Du, Congcong Fan, Alex Huang, David Xu, Sam Liu, Liang Wu, Kimi Yang, Ning Gu, L. Ren, Jian Wu, A. Tan, Sunny Xia, Ivan Mao","doi":"10.1109/IWAPS51164.2020.9286803","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286803","url":null,"abstract":"Real-time process monitoring (RTPM) is a method for semiconductor manufacturing monitoring and tuning using a physical prediction model. It is a fast and nondestructive process excursion measurement method which takes inputs from diffraction-based overlay measurements from YieldStar. The prediction model is created by a physical model which receives standard manufacturing information as input. The prediction capability has been validated in a manufacturing environment experiment with thin film thickness prediction difference less than 3%.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124048632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Machine Learning Virtual SEM Metrology 机器学习虚拟SEM计量
2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286804
Yan Yan, X. Shi, Tao Zhou, Bowen Xu, Chen Li, Yifei Lu, Ying Gao
{"title":"Machine Learning Virtual SEM Metrology","authors":"Yan Yan, X. Shi, Tao Zhou, Bowen Xu, Chen Li, Yifei Lu, Ying Gao","doi":"10.1109/IWAPS51164.2020.9286804","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286804","url":null,"abstract":"E-beam metrology, both CDSEM metrology and defect scan metrology, have been playing a very critical role in assessing post lithography or post etch patterning quality. SEM images can provide rich visual information for engineers to do qualitative and quantitative analysis. However, the lowe-beam metrology tool throughput makes it impossible to obtain SEM images for very large area. Monte Carlo based SEM image simulations are slow and they also require post lithography or post etch pattern 3D structures as prerequisite. To bridge the gap, we have proposed a Virtual SEM Metrology solution using physics based feature maps and the U-net neural network. With information in aerial image space encoded properly, SEM images of both post lithography and post etch can be predicted accurately enough for practical applications using our proposed Virtual SEM Metrology models.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132876000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Device-Circuit Co-Optimization for Negative Capacitance FinFETs based on SPICE Model 基于SPICE模型的负电容finfet器件电路协同优化
2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286809
Jiali Huo, Weixing Huang, Fan Zhang, Qiang Huo, Weizhuo Gan, Haoqing Xu, Huilong Zhu, H. Yin, Zhenhua Wu
{"title":"Device-Circuit Co-Optimization for Negative Capacitance FinFETs based on SPICE Model","authors":"Jiali Huo, Weixing Huang, Fan Zhang, Qiang Huo, Weizhuo Gan, Haoqing Xu, Huilong Zhu, H. Yin, Zhenhua Wu","doi":"10.1109/IWAPS51164.2020.9286809","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286809","url":null,"abstract":"This article presents a device-circuit co-optimization on Negative Capacitance FinFETs (NC-FinFETs). A physics-based SPICE model that combines industry-standard BSIM-CMG model and Landau Khalatnikov (LK) equation is developed for the NC-FinFETs. Different ferroelectric areas (AFE) are selected to analyze the characteristics of the NC-FinFETs. The influences of work function (WF) and capacitance matching on NC-FinFETs are investigated to further optimize the DC performance of inverters. Based on the NC-FinFETs SPICE model, we simulate the transient characteristics of the ring oscillator (RO) and analyze the delay-energy characteristics of the RO in detail. At low supply voltage $(V_{DD})$ the delay of NC-FinFETs-based RO is much smaller than that of conventional FinFETs-based RO. Under the same delay, the energy consumption of NC-FinFETs-based RO is 50.4% lower than that of FinFETs-based RO. This result shows that NC-FinFETs have great advantages in low-power applications.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115600057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast and Accurate Machine Learning Inverse Lithography Using Physics Based Feature Maps and Specially Designed DCNN 使用基于物理的特征映射和专门设计的DCNN快速准确的机器学习逆光刻
2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286814
X. Shi, Yan Yan, Tao Zhou, Xueru Yu, Chen Li, Shoumian Chen, Yuhang Zhao
{"title":"Fast and Accurate Machine Learning Inverse Lithography Using Physics Based Feature Maps and Specially Designed DCNN","authors":"X. Shi, Yan Yan, Tao Zhou, Xueru Yu, Chen Li, Shoumian Chen, Yuhang Zhao","doi":"10.1109/IWAPS51164.2020.9286814","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286814","url":null,"abstract":"To achieve full chip inverse lithography technology (ILT) solution, we proposed a hybrid approach in this study by combining first few physics based feature maps as model input with a specially designed DCNN structure to learn the rigorous ILT algorithm. Our results show that this approach can make machine learning ILT easy, fast and more accurate.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128685082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Modified Anti-windup Control for High Precision Motion System 高精度运动系统的改进型防上卷控制
2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286818
Zhijuan Wu, Minxiao Ding, Jing Li
{"title":"Modified Anti-windup Control for High Precision Motion System","authors":"Zhijuan Wu, Minxiao Ding, Jing Li","doi":"10.1109/IWAPS51164.2020.9286818","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286818","url":null,"abstract":"This study aims to solve the windup problem caused by the actuator saturation of the high precision motion system after the acceleration process. We propose two anti-windup control methods by adding anticipatory saturation units to the traditional anti-windup controllers, hence the actuator saturation is suppressed when control inputs are approaching the actuators' limits. One of the two anti-windup controllers is based on modified back-calculation, and the other one modifies the variable structure. Simulation results show that the two modified controllers can both improve the scanning accuracy greatly, decease the settling time and overshoot evidently, and have a smooth and stable scanning speed. Moreover, the controller with modified variable structure performs even better than that with modified back-calculation.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131724842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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