2020 International Workshop on Advanced Patterning Solutions (IWAPS)最新文献_第3页

An effective method of contour extraction for SEM image based on DCNN 一种有效的基于DCNN的扫描电镜图像轮廓提取方法

2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286798

Tao Zhou, X. Shi, Yanyan, Chen Li, Shoumian Chen, Yuhang Zhao, Wenzhan Zhou, Kan Zhou, Xuan Zeng

引用次数: 5

Table Contents 表的内容

2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/iwaps51164.2020.9286815

引用次数: 0

A novel SEM image based advanced lithography process control providing quick feedback 一种新型的基于扫描电镜图像的先进光刻工艺控制，提供快速反馈

2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286802

Xuedong Fan, Lijun Chen, Jun Zhu, Haichang Zheng, Xiaolong Wang, Yancong Ge, Yu Zhang, A. Vikram, Guojie Cheng, Hui Wang, Qing Zhang, Wenkui Liao

{"title":"A novel SEM image based advanced lithography process control providing quick feedback","authors":"Xuedong Fan, Lijun Chen, Jun Zhu, Haichang Zheng, Xiaolong Wang, Yancong Ge, Yu Zhang, A. Vikram, Guojie Cheng, Hui Wang, Qing Zhang, Wenkui Liao","doi":"10.1109/IWAPS51164.2020.9286802","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286802","url":null,"abstract":"The stability of photolithography process tool is the fundamental to the fabrication of semiconductor devices. Several process control methods are employed to qualify and then monitor every single process layer at the photolithography stage. The CDSEM (Critical Dimension Scanning Electron Microscope) measurements on metrology features and the optical inspection and DRSEM (Defect Review Scanning Electron Microscope) on device features for Process Window Qualification is part of the conventional process control. Here we employed a novel PSD (Process Stability Diagnosis) solution that provides detailed Bossung plot like analysis on device features using CDSEM or DRSEM images. This provides quick insight into the process behavior and also identifies the root cause for any deviation. In this paper we will discuss about monitoring the depth of focus and the best focus as well as diagnosis for lens parameters like astigmatism and spherical aberration. We describe the method of extracting relevant parameters from high resolution images and establishing an automatic monitor for these critical indicators.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123439007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

The impact of lenses aberration on CD and position for low kl lithography 透镜像差对低kl光刻CD和位置的影响

2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286800

Tie Li, Hsuan-Cheng Lai, Jie Xu, Xiaodong Meng

引用次数: 0

Novel Target Design for Thick Resist Layers Overlay Measurement Improvement 厚阻胶层叠加测量改进的新型靶设计

2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286812

Chao Fang, Jinyu Qiu, Pandeng Xuan, Yaobin Feng, Lingyi Guo, Jiahui He, Jincheng Pei, Gang Xu, Jin Zhu

{"title":"Novel Target Design for Thick Resist Layers Overlay Measurement Improvement","authors":"Chao Fang, Jinyu Qiu, Pandeng Xuan, Yaobin Feng, Lingyi Guo, Jiahui He, Jincheng Pei, Gang Xu, Jin Zhu","doi":"10.1109/IWAPS51164.2020.9286812","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286812","url":null,"abstract":"Metrology target quality highly impacts overlay measurement accuracy and robustness. Factors that can affect target quality include target pattern symmetry, pattern uniformity over one target, and target quality variation within wafer, wafer to wafer and lot to lot. Historically, multiple studies have revealed how metrology pattern asymmetry causes overlay measurement inaccuracy issues. Target design can address pattern asymmetry induced overlay error, to some extent, by providing a process compatible design. Metrology targets synchronously consider process compatibility, metrology system capability and target design basic rule. In some cases, the minimum design rule is constrained by process condition. Staircase loop layers of the 3D-NAND integration process are the typical case where resist thickness limits the accessible minimum CD/pitch. The required larger CD/pitch sometimes even violates the basic design rule of the metrology target. In this study, a novel target design is applied to address thick photo-resist processes. Compared to the baseline, the new target design helps address overlay error induced by pattern asymmetry, thus improving thick resist layers overlay measurement accuracy.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130509703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fast mask near-field calculation using fully convolution network 快速掩模近场计算使用全卷积网络

2020 International Workshop on Advanced Patterning Solutions (IWAPS) Pub Date : 2020-11-05 DOI: 10.1109/IWAPS51164.2020.9286805

Jiaxin Lin, Lisong Dong, Taian Fan, Xu Ma, Rui Chen, Yayi Wei

引用次数: 8