透镜像差对低kl光刻CD和位置的影响

Tie Li, Hsuan-Cheng Lai, Jie Xu, Xiaodong Meng
{"title":"透镜像差对低kl光刻CD和位置的影响","authors":"Tie Li, Hsuan-Cheng Lai, Jie Xu, Xiaodong Meng","doi":"10.1109/IWAPS51164.2020.9286800","DOIUrl":null,"url":null,"abstract":"In low $\\mathrm{k}_{1}$ regime, the lithography resolution is close to the optical diffraction limit. Ignoring the impact of lenses aberration for such precise lithography processes is questionable. The aberration of lithography lenses in circular pupil is typically represented by Zernike polynomials. In theory, even Zernike aberrations mainly induce pattern critical dimension (CD) variation and odd Zernike aberrations mainly induce pattern position variation. We study the CD and position simulations in various lithography configurations, such as numerical aperture (NA), illumination sigma, defocus, wafer stack, and pattern pitch. Based on the above data, this paper comprehensively discusses the impact of each Zernike aberration on pattern CD and position. The conclusion is useful to accurately predict pattern CD and position variations and to further implement aberration-aware optical proximity correction (OPC) for actual lithography lenses.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The impact of lenses aberration on CD and position for low kl lithography\",\"authors\":\"Tie Li, Hsuan-Cheng Lai, Jie Xu, Xiaodong Meng\",\"doi\":\"10.1109/IWAPS51164.2020.9286800\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In low $\\\\mathrm{k}_{1}$ regime, the lithography resolution is close to the optical diffraction limit. Ignoring the impact of lenses aberration for such precise lithography processes is questionable. The aberration of lithography lenses in circular pupil is typically represented by Zernike polynomials. In theory, even Zernike aberrations mainly induce pattern critical dimension (CD) variation and odd Zernike aberrations mainly induce pattern position variation. We study the CD and position simulations in various lithography configurations, such as numerical aperture (NA), illumination sigma, defocus, wafer stack, and pattern pitch. Based on the above data, this paper comprehensively discusses the impact of each Zernike aberration on pattern CD and position. The conclusion is useful to accurately predict pattern CD and position variations and to further implement aberration-aware optical proximity correction (OPC) for actual lithography lenses.\",\"PeriodicalId\":165983,\"journal\":{\"name\":\"2020 International Workshop on Advanced Patterning Solutions (IWAPS)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Workshop on Advanced Patterning Solutions (IWAPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWAPS51164.2020.9286800\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWAPS51164.2020.9286800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在低$\ mathm {k}_{1}$区域,光刻分辨率接近光学衍射极限。对于如此精确的光刻工艺,忽略透镜像差的影响是值得怀疑的。圆瞳光刻透镜的像差一般用泽尼克多项式表示。理论上,偶泽尼克像差主要引起图案临界维数的变化,奇泽尼克像差主要引起图案位置的变化。我们研究了不同光刻配置下的CD和位置模拟,如数值孔径(NA)、照度sigma、离焦、晶圆堆叠和模式间距。在此基础上,综合讨论了各种泽尼克像差对图案CD和位置的影响。该结论有助于准确预测图案CD和位置变化,并进一步实现实际光刻透镜的像差感知光学接近校正(OPC)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The impact of lenses aberration on CD and position for low kl lithography
In low $\mathrm{k}_{1}$ regime, the lithography resolution is close to the optical diffraction limit. Ignoring the impact of lenses aberration for such precise lithography processes is questionable. The aberration of lithography lenses in circular pupil is typically represented by Zernike polynomials. In theory, even Zernike aberrations mainly induce pattern critical dimension (CD) variation and odd Zernike aberrations mainly induce pattern position variation. We study the CD and position simulations in various lithography configurations, such as numerical aperture (NA), illumination sigma, defocus, wafer stack, and pattern pitch. Based on the above data, this paper comprehensively discusses the impact of each Zernike aberration on pattern CD and position. The conclusion is useful to accurately predict pattern CD and position variations and to further implement aberration-aware optical proximity correction (OPC) for actual lithography lenses.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信