Photoresist for Extreme Ultraviolet Lithography

Peipei Tao, Li Sheng, Qianqian Wang, Hao Cui, Xiaolin Wang, Xiangming He, Hong Xu
{"title":"Photoresist for Extreme Ultraviolet Lithography","authors":"Peipei Tao, Li Sheng, Qianqian Wang, Hao Cui, Xiaolin Wang, Xiangming He, Hong Xu","doi":"10.1109/IWAPS51164.2020.9286794","DOIUrl":null,"url":null,"abstract":"Lithography enabled nanoscale fabrication in the semiconductor industry, is also the primarily driven force for the microelectronics revolution. In the history of photolithography, scientists have been working on reducing the light wavelength for higher lithographic resolution. With the rapid development of semiconductors, today's 193-nm immersion lithography is approaching its physical limits. Extreme ultra-violet (EUV) lithography with a wavelength of 13.5 nm has been emerged as the most promising candidate to continue Moore's law. However, the dramatic decrease of the wavelength of the light source has brought many technological challenges on both the machine side and the photoresist side for semiconductor high volume manufacturing (HVM). Historically, the invention of chemically amplified resists (CARs) with significantly improved sensitivity had helped overcome the power output challenge of the light source in deep ultra-violet (DUV) lithography. A possible solution for current EUVL challenges is continually developing new photoresists to efficiently absorb the EUV light, even though polymer-based CARs have been widely used for decades. This review discusses the challenges in EUVL and the progress in the EUV photoresists materials, including polymer, molecular glass, and metal-oxide nanoparticles type photoresists. A brief discussion of the development strategies and future challenges for EUV photoresists is also included.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWAPS51164.2020.9286794","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Lithography enabled nanoscale fabrication in the semiconductor industry, is also the primarily driven force for the microelectronics revolution. In the history of photolithography, scientists have been working on reducing the light wavelength for higher lithographic resolution. With the rapid development of semiconductors, today's 193-nm immersion lithography is approaching its physical limits. Extreme ultra-violet (EUV) lithography with a wavelength of 13.5 nm has been emerged as the most promising candidate to continue Moore's law. However, the dramatic decrease of the wavelength of the light source has brought many technological challenges on both the machine side and the photoresist side for semiconductor high volume manufacturing (HVM). Historically, the invention of chemically amplified resists (CARs) with significantly improved sensitivity had helped overcome the power output challenge of the light source in deep ultra-violet (DUV) lithography. A possible solution for current EUVL challenges is continually developing new photoresists to efficiently absorb the EUV light, even though polymer-based CARs have been widely used for decades. This review discusses the challenges in EUVL and the progress in the EUV photoresists materials, including polymer, molecular glass, and metal-oxide nanoparticles type photoresists. A brief discussion of the development strategies and future challenges for EUV photoresists is also included.
极紫外光刻用光刻胶
光刻技术使半导体行业的纳米级制造成为可能,也是微电子革命的主要推动力。在光刻技术的历史上,科学家们一直致力于减少光波长以获得更高的光刻分辨率。随着半导体技术的飞速发展,如今的193nm浸没光刻技术已接近其物理极限。波长为13.5 nm的极紫外光刻技术已成为延续摩尔定律的最有希望的候选技术。然而,光源波长的急剧减少给半导体大批量生产(HVM)带来了许多技术挑战,无论是在机器方面还是在光刻胶方面。从历史上看,具有显着提高灵敏度的化学放大抗蚀剂(CARs)的发明有助于克服深紫外(DUV)光刻中光源功率输出的挑战。尽管基于聚合物的car已经被广泛使用了几十年,但当前EUV挑战的一个可能解决方案是不断开发新的光阻剂,以有效地吸收EUV光。本文综述了EUV光阻材料的研究进展,包括聚合物、分子玻璃和金属氧化物纳米颗粒型光阻材料。本文还简要讨论了EUV光刻胶的发展策略和未来的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信