厚掩模模型下的源优化

Yang Liu, Yiyu Sun, Yanqiu Li, Pengzhi Wei, Lihui Liu, Enze Li
{"title":"厚掩模模型下的源优化","authors":"Yang Liu, Yiyu Sun, Yanqiu Li, Pengzhi Wei, Lihui Liu, Enze Li","doi":"10.1109/IWAPS51164.2020.9286817","DOIUrl":null,"url":null,"abstract":"Source optimization(SO) is a key method of resolution enhancement technology. However, as the technique node enters 45 nm and below, the influence of thick mask effect has become apparent. The result of source optimization considering the mask as a thin film is inaccurate. In this paper, we propose a source optimization model considering thick mask structure. We establish the theoretical model of source optimization with gradient method and compressive sensing(CS) method. The typical masks of 45nm, 28nm and 22nm were selected for simulation. The optimized source provides better imaging performance, while the simulation speed has been improved by using CS method.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Source Optimization under Thick Mask Model\",\"authors\":\"Yang Liu, Yiyu Sun, Yanqiu Li, Pengzhi Wei, Lihui Liu, Enze Li\",\"doi\":\"10.1109/IWAPS51164.2020.9286817\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Source optimization(SO) is a key method of resolution enhancement technology. However, as the technique node enters 45 nm and below, the influence of thick mask effect has become apparent. The result of source optimization considering the mask as a thin film is inaccurate. In this paper, we propose a source optimization model considering thick mask structure. We establish the theoretical model of source optimization with gradient method and compressive sensing(CS) method. The typical masks of 45nm, 28nm and 22nm were selected for simulation. The optimized source provides better imaging performance, while the simulation speed has been improved by using CS method.\",\"PeriodicalId\":165983,\"journal\":{\"name\":\"2020 International Workshop on Advanced Patterning Solutions (IWAPS)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Workshop on Advanced Patterning Solutions (IWAPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWAPS51164.2020.9286817\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWAPS51164.2020.9286817","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

信号源优化是一种关键的分辨率增强技术。然而,当技术节点进入45 nm及以下时,厚掩膜效应的影响变得明显。考虑掩模为薄膜的光源优化结果是不准确的。本文提出了一种考虑厚掩膜结构的源优化模型。建立了基于梯度法和压缩感知(CS)方法的源优化理论模型。选取45nm、28nm和22nm的典型掩模进行仿真。优化后的源具有更好的成像性能,同时采用CS方法提高了仿真速度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Source Optimization under Thick Mask Model
Source optimization(SO) is a key method of resolution enhancement technology. However, as the technique node enters 45 nm and below, the influence of thick mask effect has become apparent. The result of source optimization considering the mask as a thin film is inaccurate. In this paper, we propose a source optimization model considering thick mask structure. We establish the theoretical model of source optimization with gradient method and compressive sensing(CS) method. The typical masks of 45nm, 28nm and 22nm were selected for simulation. The optimized source provides better imaging performance, while the simulation speed has been improved by using CS method.
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