发布求助
文献互助 智能选刊 最新文献

International Conference on Photoelectronics and Night Vision Devices最新文献

筛选
英文 中文
Application of pulsed UV laser for dicing of arrays and linear of photodiodes based on MCT solid solution 基于MCT固溶体的脉冲紫外激光在光电二极管阵列和线形切割中的应用
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742639
A. Novoselov, A. G. Klimenko, V. Vasilyev
{"title":"Application of pulsed UV laser for dicing of arrays and linear of photodiodes based on MCT solid solution","authors":"A. Novoselov, A. G. Klimenko, V. Vasilyev","doi":"10.1117/12.742639","DOIUrl":"https://doi.org/10.1117/12.742639","url":null,"abstract":"The modern systems of vision in infrared spectrum (IR) require elaboration of large-area nondefective imaging area with small pitch (less 40 μm) IR FPA. One of the directions is fabrication hybrid FPA, consisting of several of arrays of photodiodes based on MCT films (HgxCd1-xTe on GaAs substrates) and readout circuits on silicon. Substitution of photodiodes array of large-area imaging area on few arrays of smaller image size, allows having the imaging area of the required size without fault pixels. The main requirement is the permanent period of photodetectors on component imaging areas. without loss of pixels on lines of gaps of the butting between arrays. Using concentrated laser radiation, for scribing the surfaces MCT film on GaAs substrate, under concrete conditions, allows to realize offered above direction. The determination of the border of zone of the influence of the laser radiation on electric characteristic of p-n junction of the MCT films and technological ways of the reduction of area of influence of the laser radiation are presented in work. We had studied the change of parameters of photodiodes on base MCT films depending on distances before laser dicing grooves and condition of the laser radiation. As source of the laser radiation we used pulsed UV laser (LGI-21) at 0,34 μm wavelength with pulse duration 7 ns, frequency of repetition 50 - 100 Hz and power in pulse 2 KW. We founded condition of the laser dicing on distances 18 - 20 μm from photodiodes, when initial current-voltage characteristics of photodiodes are saved. We designed method of the laser dicing of linear photodiodes on MCT films, and we used it to create of multichips hybrid IR FPA. The result is non damage dicing of linear photodiodes on MCT films (λc =12 μm) on distances 18 - 20 μm from p-n junctions.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122785385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the degree to which the increase in the concentration of the recombination centers raises the efficiency of inter-band photo-excitation of Dember's electromotive force under low-intensity optical radiation 在低强度光辐射下，复合中心浓度的增加对登伯尔电动势带间光激发效率的提高程度
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742523
V. Kholodnov, A. Drugova
{"title":"On the degree to which the increase in the concentration of the recombination centers raises the efficiency of inter-band photo-excitation of Dember's electromotive force under low-intensity optical radiation","authors":"V. Kholodnov, A. Drugova","doi":"10.1117/12.742523","DOIUrl":"https://doi.org/10.1117/12.742523","url":null,"abstract":"The results of theoretical analysis of influence of the photo-induced space charge upon the Dember's effect (photo- EMF) in the case of inter-band absorption of low-intensity optical radiation and non-equilibrium carrier recombination via deep impurity are presented. The model of a single recombination deep acceptor level and shallow donor impurity is considered. The task is solved beyond the commonly used approximation of quasi-neutrality. It is shown that the solution beyond the approximation of quasi-neutrality may be basically differed from the quasi-neutral solutions.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126935894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calculation of photosensitivity of porous silicon for optoelectronic devices 光电子器件用多孔硅光敏性的计算
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742527
L. Monastyrskii, B. Sokolovskii
{"title":"Calculation of photosensitivity of porous silicon for optoelectronic devices","authors":"L. Monastyrskii, B. Sokolovskii","doi":"10.1117/12.742527","DOIUrl":"https://doi.org/10.1117/12.742527","url":null,"abstract":"It has been developed a new theoretical model for the photosensitivity of porous silicon which takes into account the recombination of photocarriers at the surfaces of spherical pores. An expression for the semiconductor photoconductivity has been derived under assumption of uniform generation of photocarriers and diffusion character of their movement. The photosensitivity of porous silicon has been shown to strongly depend on the velocity of photocarriers recombination at the pore's surfaces, radius of pores and average distance between pores.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"06 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127139703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Organic materials and structures for photoelectronics 光电子用有机材料和结构
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742311
O. Ermakov, M. Kaplunov, O. Efimov, Sergey A. Stacharny
{"title":"Organic materials and structures for photoelectronics","authors":"O. Ermakov, M. Kaplunov, O. Efimov, Sergey A. Stacharny","doi":"10.1117/12.742311","DOIUrl":"https://doi.org/10.1117/12.742311","url":null,"abstract":"Brief history and development trends of organic materials based photosensitive devices including home activities in this field are presented. New home-made organic materials are briefly reviewed including DA - BuTAZ, Zn ( OB-pDA), Zn (OBGO)2 , Zn (OBBA)2 PTA. Data are presented for new organic materials optical properties (both photoluminescence and absorption) in the wide spectral range. It's noted that large Stokes shift is generally observed between optical absorption and luminescence bands. Two layer device structures characteristics have been studied. Data are presented for their current-voltage and photoelectric characteristics. It's noted that photosensitivity spectra have complicated character resembling that of absorption its maximum being located in UV spectral region. Comparison between organic and inorganic photodetectors is presented. Several differences are observed namely power-law current-voltage dependence and essential increase of photosensitivity with applied voltage.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128143541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photodetector with thermoelectric cooler 带热电冷却器的光电探测器
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742328
Z. F. Agaev, D. Abdinov
{"title":"Photodetector with thermoelectric cooler","authors":"Z. F. Agaev, D. Abdinov","doi":"10.1117/12.742328","DOIUrl":"https://doi.org/10.1117/12.742328","url":null,"abstract":"In the present work results of study of a photodetector with thermoelectric cooler for operation in the spectral range 3-5 μm have been presented. As a material for sensitive elements Cd1-xHgxTe (x=0.28-0.30) solid solution single crystals were used. For cooling a photosensitive element three-cascade thermoelectric cooler providing cooling on a temperature level ~ 200 K was used. It is established that the value of the specific detectability of developed photoreceiver at ~ 200 K on λ= 4,5 λm wavelength equals DλMAX greater than or equal to 1 x 1010 cm x Hz1/2W-1.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116608851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Determination of capture levels parameters responsible for photoelectret state in cadmium telluride films 碲化镉薄膜中光电驻极体状态的捕获水平参数的测定
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742644
G. A. Nabiev
{"title":"Determination of capture levels parameters responsible for photoelectret state in cadmium telluride films","authors":"G. A. Nabiev","doi":"10.1117/12.742644","DOIUrl":"https://doi.org/10.1117/12.742644","url":null,"abstract":"In the paper, an ability of determination of capture levels parameters, which are responsible for photoelectret state using relaxation curves in silver-doped cadmium telluride films have been studied.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121698919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photodetector units for second generation thermal imaging systems in Orion 猎户座第二代热成像系统的光电探测器单元
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742280
I. Burlakov, E. V. Degtyarev, V. Ponomarenko, A. M. Filachev
{"title":"Photodetector units for second generation thermal imaging systems in Orion","authors":"I. Burlakov, E. V. Degtyarev, V. Ponomarenko, A. M. Filachev","doi":"10.1117/12.742280","DOIUrl":"https://doi.org/10.1117/12.742280","url":null,"abstract":"Infrared second generation photodetectors developments have been carried out in RD&P Center \"Orion\" for creation short wavelength IR (SWIR, 1 to 3μm), medium wavelength IR (MWIR, 3 to 5 μm) and long wavelength IR (LWIR, 8 to 1 μm) on the base of lead chalcogenides (PbS, PbSe), indium antimonide (InSb) and mercury cadmium telluride (CdHg1Te). Performance and operational functionality of 2xl28 (PbS, PbSe), 256x256 (InSb), and 2x256, 4x288 256x256, 384x288, 768x576 (MCT) focal plane arrays (FPA) are specified. Requirements to the FPA for main directions of thermovision systems applications are given.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"237 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133397846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal annealing impact on the properties of CdxHg1-xTe epitaxial layers with anodic oxidation 热退火对阳极氧化CdxHg1-xTe外延层性能的影响
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742619
E. Huseynov, Sh. O. Eminov, A. A. Radjabli, N. D. Isamyilov, T. Ibragimov
{"title":"Thermal annealing impact on the properties of CdxHg1-xTe epitaxial layers with anodic oxidation","authors":"E. Huseynov, Sh. O. Eminov, A. A. Radjabli, N. D. Isamyilov, T. Ibragimov","doi":"10.1117/12.742619","DOIUrl":"https://doi.org/10.1117/12.742619","url":null,"abstract":"From the point of view of its fundamental properties, solid solution Hg1-xCdxTe (0 less than or equal to x less than or equal to l) (MCT) is one of very attractive materials of infrared optoelectronics and has received considerable attention over the past forty odd years. In the early 90s, bulk growth of MCT was phased out for the routine production of first generation photo-conductive devices. But it is hard process to growth MCT single crystals with homogeneous composition. This fact determined a vital importance change in the MCT technology during the last decade which first at all induced by the mostly replacement of bulk growth by epitaxial technologies (LPE, MBE, VPE etc.).","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131515995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Superluminescence from optically pumped CdxHg1-xTe heterostructures on GaAs and Si substrates 光泵浦CdxHg1-xTe异质结构在GaAs和Si衬底上的超发光
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742528
A. Andronov, Y. Nozdrin, A. V. Okomel’kov, A. Babenko, D. Ikusov, R. N. Smirnov, V. Varavin
{"title":"Superluminescence from optically pumped CdxHg1-xTe heterostructures on GaAs and Si substrates","authors":"A. Andronov, Y. Nozdrin, A. V. Okomel’kov, A. Babenko, D. Ikusov, R. N. Smirnov, V. Varavin","doi":"10.1117/12.742528","DOIUrl":"https://doi.org/10.1117/12.742528","url":null,"abstract":"We report the experimental observation of superluminescence in the wavelength range 1 .4 - 4.5 μm from epitaxial structures Cdx4Hg1-xTe under pulsed optical pumping by Nd:YAG laser. The samples CdxHg1-xTe were grown on GaAs and Si substrates by the Molecular Beam Epitaxy. The stimulated emission has been observed from the structures at temperatures 77 - 200 K. Details of the samples, observation scheme, the super luminescence spectra are discussed.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131646650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe 基于n-和p- MBE HgCdTe的miss结构电压-电容曲线分析
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742637
V. N. Ovsyuk, A. V. Yartsev
{"title":"Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe","authors":"V. N. Ovsyuk, A. V. Yartsev","doi":"10.1117/12.742637","DOIUrl":"https://doi.org/10.1117/12.742637","url":null,"abstract":"The active and reactive part of C-V curve of MIS structure based on MBE HgCdTe is analyzed. It's shown, that HgCdTe - Si02 confine has a surface states density equal to 2.4 1011 cm-2. This value is not depended from conductivity type and graded-band gap presence. The n-CdHgTe has surface recombination as dominant mechanism.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129845627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信