发布求助
文献互助 智能选刊 最新文献

International Conference on Photoelectronics and Night Vision Devices最新文献

筛选
英文 中文
TV system All Sky for real-time remote monitoring of night cloud condition 全天空电视系统用于实时远程监测夜云状况
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742382
V. Komarov, A. Fomenko, V. Shergin
{"title":"TV system All Sky for real-time remote monitoring of night cloud condition","authors":"V. Komarov, A. Fomenko, V. Shergin","doi":"10.1117/12.742382","DOIUrl":"https://doi.org/10.1117/12.742382","url":null,"abstract":"There has been created a TV system which is intended for the remote real-time computer control of night cloudness conditions during observations with the optical telescopes of SAO RAS simultaneously all over the sky hemishere at the 6m telescope site neighbourhood. The features of developing such systems are considered. Technical parameters of the system devices program interlaces and the description of operation principle are given.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126639195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
All-round surveillance infrared snapshot FPA system with digital image-rotation compensation 带数字图像旋转补偿的全方位监控红外快照FPA系统
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742305
L. I. Gorelik, Anton Petrov
{"title":"All-round surveillance infrared snapshot FPA system with digital image-rotation compensation","authors":"L. I. Gorelik, Anton Petrov","doi":"10.1117/12.742305","DOIUrl":"https://doi.org/10.1117/12.742305","url":null,"abstract":"One of the methods, allowing to implement the all-round surveillance system with the minimal mass and overall dimensional characteristics, is the method of digital image-rotation compensation. Present article is devoted to studying of this method with the purpose of creation of the bases of mathematical model of such system in which mathematical laws which describe movement of each pixel of the infrared Snapshot focal plane array (FPA) in the object space should lay.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114578289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Production of ZnSxSe1-x zinc sulfoselenides by CVD method CVD法制备ZnSxSe1-x硫代硒化锌
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742616
E. Gavrishchuk, D. Savin, V. Ikonnikov, T. I. Storogeva
{"title":"Production of ZnSxSe1-x zinc sulfoselenides by CVD method","authors":"E. Gavrishchuk, D. Savin, V. Ikonnikov, T. I. Storogeva","doi":"10.1117/12.742616","DOIUrl":"https://doi.org/10.1117/12.742616","url":null,"abstract":"A CVD-technique for production of bulk ZnSxSe1-x with homogeneous composition has been proposed. A comparative analysis of optical and structural characteristics of zinc sulfoselenides has been carried out prior to and after hot isostatic pressure (HIP). Solid solutions of ZnSxSe1-x zinc chalcogenides are wide gap semiconductors applied as the materials for optoelectronics, various photoelectric and optical devices. There is an interest to their application as an operating medium of solid-state lasers and in gradient optics. The method of chemical vapor deposition (CVD) is the most promising method for production of zinc chalcogenides with simultaneously high optical and strength characteristics; however, it happens to be impossible to manufacture the samples ofZnSxSe1-x with homogeneous composition in the reactors used for production of ZnS and ZnSe. Due to this fact the problem of production of zinc sulfoselenides with the given constant composition by CVD method is of vital importance. The goal of our paper is the development of technique for production of bulk samples of zinc sulfoselenides with homogeneous composition by CVD method as well as the investigation of the effect of hot isostatic pressure (HIP) on structure and optical properties of ZnSxSe1-x.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125038212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photosensitivity of SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu heterojunctions in visible and near IR regions of spectrum SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu异质结在可见光和近红外光谱中的光敏性
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742555
H. Mamedov, S. I. Amirova
{"title":"Photosensitivity of SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu heterojunctions in visible and near IR regions of spectrum","authors":"H. Mamedov, S. I. Amirova","doi":"10.1117/12.742555","DOIUrl":"https://doi.org/10.1117/12.742555","url":null,"abstract":"Effective thin film heterojunctions SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu were manufactured by the method of electrochemical deposition. It is shown, that not treated heterojunctions possess the sensitivity only in visible region of spectrum. At illumination by the solar simulator with W = 100 mVt/sm2, not treated structures had the following photoelectric parameters: Isc ≈ 4.76 mA/cm2, 0.448 V, D* = 3 x 104 cm x Hz1/2Vt-1. Annealing of samples in air results to substantial increase of photosensitivity is found. After TA at t = 350°C and τ = 9 min, the sensitivity of samples in the 0.8 - 1.0 μm wavelength region sharply increase, that is due to formation of films Cu2Se at thermal annealing by means of diffusion of copper atoms from buffer contact through CdTe to Cd0.8Zn0.2S0.1Se0.9. Thus investigated structures possess following values of short circuit photocurrent, open circuit photovoltage and detectability: 1sc = 19,4 mA/cm2, Uoc = 637 mV, D* = 8 x 106 cm x Hz1/2 x Vt-1.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132918107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The focal plane array based on MIS-photodiodes on InAs for pulse optical data registration 基于miss光电二极管的聚焦平面阵列用于脉冲光学数据配准
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742302
I. I. Lee, V. M. Bazovkin, N. A. Valisheva, A. Guzev, V. Efimov, A. P. Kovchavtsev, G. L. Kuryshev, V. G. Polovinkin
{"title":"The focal plane array based on MIS-photodiodes on InAs for pulse optical data registration","authors":"I. I. Lee, V. M. Bazovkin, N. A. Valisheva, A. Guzev, V. Efimov, A. P. Kovchavtsev, G. L. Kuryshev, V. G. Polovinkin","doi":"10.1117/12.742302","DOIUrl":"https://doi.org/10.1117/12.742302","url":null,"abstract":"The focal plane array (IR FPA) on the basis of metal-insulator-structure (MIS) photodetectors on InAs auto-epitaxial substrate ol 8x8 elements is designed and fabricated. It is shown, that the IR FPA provides definition of coordinate and time of arrival of optical pulse signals with energy 8x10-17 J/element and accuracy not worse 100 ns.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"2002 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123631412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Organic electroluminescent structures for new generation of display systems 新一代显示系统的有机电致发光结构
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742310
O. Ermakov, M. Kaplunov, O. Efimov, S. A. Stakharny
{"title":"Organic electroluminescent structures for new generation of display systems","authors":"O. Ermakov, M. Kaplunov, O. Efimov, S. A. Stakharny","doi":"10.1117/12.742310","DOIUrl":"https://doi.org/10.1117/12.742310","url":null,"abstract":"Brief history, modern state and development trends of organic electroluminescent structures technology (so-called OLED technology) are reviewed including research activities in this field in Russia. It's noted that OLED technology is one of the most promising newly emerging display technologies. Due to advantages of these devices (low power consumption, potential flexibility, wide color range) it is particularly well suited for small area display applications (micro displays) such as cell phones, virtual imaging systems, portable electronics. Experimental results for homemade blue light emitting OLED structures and hermetically sealed numeric displays are presented including photoluminescence (PL) and electroluminescence (EL ) current-voltage and brightness characteristics. It is noted that visible electroluminescence is observed at ultra low current level of nearly 1 μA, luminous efficiency exceeding 1 lm/W thus being nearly the same as for super bright inorganic inGaN/IGaN LEDs. Special attention is paid for destabilizing factors (temperature and degradation phenomena) influence on device characteristics.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130373606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preparation and investigation of electrodeposited p-Si/Cd0.3Zn0.7S0.4Se0.6 heterojunction 电沉积p-Si/Cd0.3Zn0.7S0.4Se0.6异质结的制备与研究
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742615
A. Abdinov, H. Mamedov, S. I. Amirova
{"title":"Preparation and investigation of electrodeposited p-Si/Cd0.3Zn0.7S0.4Se0.6 heterojunction","authors":"A. Abdinov, H. Mamedov, S. I. Amirova","doi":"10.1117/12.742615","DOIUrl":"https://doi.org/10.1117/12.742615","url":null,"abstract":"The dependences of electric and photoelectric parameters of the heterojunctions p-Si/Cd0.3Zn0.7S0.4Se0.6 on the thermal annealing regime are investigated. It is shown, that after thermal annealing at 400°C for τ = 6 min, a recombination rate on the interface does not almost change in a wide range of temperature. As the annealing temperature was increased from 0 to 170°C (τ= 2min), the intensity of peak in the λml = 0.593 μm wavelength region sharply increases. Upon heart treatment in air at t = 400°C for 5 ÷ 6 min, heterojunctions exhibit high photosensitivity over a wide spectral range (0.560 - 1 .38 μm). The evaluation of solar cell parameters was carried out using the dark and light current-voltage characteristics. The open circuit photovoltage and short circuit photocurrent density of HJ were Voc = 0.564 V, Jsc= 1 8.7 mA/cm2, respectively.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122768844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InSb 288*32 FPA with digital TDI for low background application InSb 288*32 FPA与数字TDI低背景应用
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742288
V. F. Chishko, I. Kasatkin, A. Lopukhin
{"title":"InSb 288*32 FPA with digital TDI for low background application","authors":"V. F. Chishko, I. Kasatkin, A. Lopukhin","doi":"10.1117/12.742288","DOIUrl":"https://doi.org/10.1117/12.742288","url":null,"abstract":"32*288 format FPA based on InSb two dimension arrays (IDA) of photodiodes with function of digital TDI were investigated at low background flow. Dark currents of TDA photodiodes in wide temperature region, spectral noise distribution and threshold power with TDI simulation are investigated. It was established that at T=77K dark current is (I - 3)*10-11A at optimal negative bias and decreases in the order of magnitude at T=65K. Threshold power at T=77K at integration time Ti=6 ms is not more 2*10-14 W/pixel and is limited commonly by dark current noise. Modeling of digital TDI showed that not more than twenty TDI stages are effective because of the presence of 1/f noise and threshold power would be at about 3*10-15 W/pixel.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129484207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structure and photoelectric properties of Pb1-xMnxSe epitaxial films Pb1-xMnxSe外延薄膜的结构与光电性能
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-04-26 DOI: 10.1117/12.742554
I. R. Nuriyev, M. Gadzhiyev, R. Sadigov, A. Nazarov
{"title":"Structure and photoelectric properties of Pb1-xMnxSe epitaxial films","authors":"I. R. Nuriyev, M. Gadzhiyev, R. Sadigov, A. Nazarov","doi":"10.1117/12.742554","DOIUrl":"https://doi.org/10.1117/12.742554","url":null,"abstract":"The features of growth, structure and photoelectric properties of Pb1-xMnxSe (x=0.02÷0.04) epitaxial films grown by the molecular beams condensation method in vacuum 10-4 Pa on BaF2 (111) substrate have been investigated. It is shown that received films possess high photosensitivity at 77 K temperature and their spectral characteristics vary by change of x. Shift of the maximum of spectral photosensitivity to shorter wavelengths with growth of x is explained by the increase in width of the forbidden band of Pbl-xMnxSe solid solutions with increase of manganese content.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127857888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-speed photodiodes for 2.0-4.0 μm spectral range 光谱范围为2.0-4.0 μm的高速光电二极管
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-04-26 DOI: 10.1117/12.742322
Y. Yakovlev, I. Andreev, S. S. Kizhayev, E. Kunitsyna, M. Mikhailova
{"title":"High-speed photodiodes for 2.0-4.0 μm spectral range","authors":"Y. Yakovlev, I. Andreev, S. S. Kizhayev, E. Kunitsyna, M. Mikhailova","doi":"10.1117/12.742322","DOIUrl":"https://doi.org/10.1117/12.742322","url":null,"abstract":"This paper reviews some recent developments in the high-speed photodiodes for 2.0-4.0 im spectral range. We report investigation, design and fabrication of broad bandwidth (2 GHz) GaInAsSb/GaA1AsSb p-i-n photodiodes operating in the 0.9-2.4 μm spectral range with submicroampere dark cunent. As well, we present InAs-based and InAs/InAsSbP photodiodes with long-wavelength cutoff of 3.8 μm. An analysis of the photodiode performance through the investigation of current-voltage, capacitance-voltage and spectral responsivity characteristics was carried out. Also, noise and speed-response characteristics were studied. In addition to high-speed response and low noise level these photodiodes offer room-temperature operation and hence are commercially viable. These devices are of great interest for a wide range of applications, such as high-resolution laser diode spectroscopy of gases and molecules, eye-safe laser rangefinding systems, the free-space optical link as well as systems of optical fiber communication.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128053353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信