光泵浦CdxHg1-xTe异质结构在GaAs和Si衬底上的超发光

A. Andronov, Y. Nozdrin, A. V. Okomel’kov, A. Babenko, D. Ikusov, R. N. Smirnov, V. Varavin
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引用次数: 5

摘要

本文报道了Nd:YAG激光脉冲光泵浦下Cdx4Hg1-xTe外延结构在1.4 ~ 4.5 μm波长范围内的超发光现象。利用分子束外延技术在GaAs和Si衬底上生长了CdxHg1-xTe样品。在温度为77 ~ 200k时,观察到结构的受激辐射。讨论了样品的细节、观测方案和超发光光谱。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Superluminescence from optically pumped CdxHg1-xTe heterostructures on GaAs and Si substrates
We report the experimental observation of superluminescence in the wavelength range 1 .4 - 4.5 μm from epitaxial structures Cdx4Hg1-xTe under pulsed optical pumping by Nd:YAG laser. The samples CdxHg1-xTe were grown on GaAs and Si substrates by the Molecular Beam Epitaxy. The stimulated emission has been observed from the structures at temperatures 77 - 200 K. Details of the samples, observation scheme, the super luminescence spectra are discussed.
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