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International Conference on Photoelectronics and Night Vision Devices最新文献

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Multispectral thermal imager 多光谱热成像仪
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742522
A. N. Sviridov, Anatoly M. Filachev, L. Saginov, A. S. Kononov
{"title":"Multispectral thermal imager","authors":"A. N. Sviridov, Anatoly M. Filachev, L. Saginov, A. S. Kononov","doi":"10.1117/12.742522","DOIUrl":"https://doi.org/10.1117/12.742522","url":null,"abstract":"The optical scheme of a multispectral thermal imaging (MSTI) is reviewed on the basis of a staring thermal imaging and interferometers established bevel way of a Brewster to an axis of sighting of the device. The calculations of a usable sensitivity, resolving power and other parameters of this device are conducted.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114810761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HgCdTe large staring arrays at SOFRADIR soradr的HgCdTe大型凝视阵列
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742283
P. Tribolet, G. Destefanis
{"title":"HgCdTe large staring arrays at SOFRADIR","authors":"P. Tribolet, G. Destefanis","doi":"10.1117/12.742283","DOIUrl":"https://doi.org/10.1117/12.742283","url":null,"abstract":"The staring array numbers of pixels are larger and larger and offer system solutions in the different IR wavebands. At Sofradir, the HgCdTe (Mercury Cadmium Telluride IMCT)material and process, as well as the hybridization technology, have been taken to an even more advanced level of sophistication to achieve these new high performance staring arrays. A lot of technological improvement have been made regarding uniformity of Focal Plan Arrays (FPA), read-out circuits with new functions like the Analog to Digital Conversion (ADC), and finally the reliability of the whole dewar detector and cooler assembly have been drastically increased during these last years. In mid-wave (MWIR) l280x1024 HgCdTe high performance staring array is presented. Also, development trends for future IR detectors are presented.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133681921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Detection of short light pulses by long inertance PbS and PbSe photodetectors 用长介电性PbS和PbSe光电探测器检测短光脉冲
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742641
S. Bushman, L. I. Gorelik, N. V. Kravchenko, K. M. Kulikov, Anton Petrov
{"title":"Detection of short light pulses by long inertance PbS and PbSe photodetectors","authors":"S. Bushman, L. I. Gorelik, N. V. Kravchenko, K. M. Kulikov, Anton Petrov","doi":"10.1117/12.742641","DOIUrl":"https://doi.org/10.1117/12.742641","url":null,"abstract":"Opportunities of application PbS and PbSe p-s for pulse radiation detection with pulses duration to 10 ns are considered. Expression for threshold stream of such detectors are obtained. Threshold stream estimation for typical values photo electrical characteristics and different light pulses duration are carried out. Frequency characteristics of the quasioptimal filters providing a maximum signal-to-noise ratio are calculated.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127495965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of the metal-semiconductor structures on the basis of Pb1-xMnxTe 基于Pb1-xMnxTe的金属半导体结构的电学性质
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742599
T. D. Aliyeva, G. D. Abdinova, N. Akhundova, B. S. Barkhalov
{"title":"Electrical properties of the metal-semiconductor structures on the basis of Pb1-xMnxTe","authors":"T. D. Aliyeva, G. D. Abdinova, N. Akhundova, B. S. Barkhalov","doi":"10.1117/12.742599","DOIUrl":"https://doi.org/10.1117/12.742599","url":null,"abstract":"The effect of an annealing at 100-110 °C on contact resistance (rk) and adhesive strength of the contacts to Pb1-xMnxTe/ (In-Ag-Au) structure in the temperature range ~77-300K have been investigated. It is found out that the effect of an annealing on rk is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the formation of an intermediate phases such as Ag2Te.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131955276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photodiodes based on Pb1-xSnxSe epitaxial films Pb1-xSnxSe外延薄膜的光电二极管
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742325
Ch. D. Jalilova, A. Aliyev, N. V. Faradjev, Sh. M. Alekperova
{"title":"Photodiodes based on Pb1-xSnxSe epitaxial films","authors":"Ch. D. Jalilova, A. Aliyev, N. V. Faradjev, Sh. M. Alekperova","doi":"10.1117/12.742325","DOIUrl":"https://doi.org/10.1117/12.742325","url":null,"abstract":"The features of the electrical, optical and photoelectric properties of gallium (Ga) doped Pb1-xSnxSe (0,03 less than or equal to x less than or equal to 0,07) epitaxial films (NGaO,5l at%) obtained by the molecular beam condensation method (MBC) are investigated. It is established that the interband absorption edge are stipulated from nondirect transition, the value of band gap (Eg), temperature coefficient of Eg are calculated. The conditions of preparing metal - Pb1-xSnxSe photodiode structures are determined and capacity temperature dependence of metal - Pb1-xSnxSe structure are analysed. The current-voltage and capacity-voltage characteristics of the obtained photodiodes.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"17 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120914632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spectral filtration of the IR images (review) 红外图像的光谱过滤(回顾)
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742518
A. M. Filachev, L. Saginov, A. S. Kononov, A. N. Sviridov, V. L. Bakumenko
{"title":"Spectral filtration of the IR images (review)","authors":"A. M. Filachev, L. Saginov, A. S. Kononov, A. N. Sviridov, V. L. Bakumenko","doi":"10.1117/12.742518","DOIUrl":"https://doi.org/10.1117/12.742518","url":null,"abstract":"In the report the works devoted to methods and technique of a spectral thermal imaging are considered. For deriving the spectral images of objects are used as methods of an immediate optical filtration with the help of tunable spectral filters of different types (optical-acoustic, interference, interferential - polarization, filters on the basis of total interior reflection and other), and methods of selection of the spectral images grounded on mathematical handling of optical fields, recorded by a matrix photodetector (for example, after a Fourier-interferometer, holograms and other). The principles of spectral selection of the images and paths of build-up spectral thermal imagers are analyzed.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134337726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current oscillations in Ag3In5Se9 stimulated by electric field and IR-irradiation 电场和红外辐射刺激下Ag3In5Se9的电流振荡
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742551
N. F. Gakhramanov, B. S. Barkhalov, Yusif Nurullayev
{"title":"Current oscillations in Ag3In5Se9 stimulated by electric field and IR-irradiation","authors":"N. F. Gakhramanov, B. S. Barkhalov, Yusif Nurullayev","doi":"10.1117/12.742551","DOIUrl":"https://doi.org/10.1117/12.742551","url":null,"abstract":"The results of study of the current oscillations in Ag3In5Se9 stimulated by electric field and IR-irradiation have been presented. Depending on intensity and wavelengths of IR-irradiation, intensity of the electric field and temperature current oscillations in a range of frequencies 0,8 ÷ 200 Hz are observed. The revealed features of the current oscillations stimulated in Ag3In5Se9 single crystals by an electric field and the IR-irradiation are explained on the basis of three-level system in the consent with which field dependence of the capture cross-section for charge carriers on local levels stimulates intrinsic photoconductivity at excitation of the sample by IR-irradiation in the range 1,12 ÷ 1.2 μm and 1,56 ÷ 1,75 μm.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"444 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115286880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Infrared photoconductivity of InGaAs/GaAs heterostructures with quantum dots 具有量子点的InGaAs/GaAs异质结构的红外光电性
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742377
V. Shashkin, V. Daniltsev, M. Drozdov, Y. Drozdov, V. Zakamov, A. Lukyanov, L. Moldavskaya, A. Murel
{"title":"Infrared photoconductivity of InGaAs/GaAs heterostructures with quantum dots","authors":"V. Shashkin, V. Daniltsev, M. Drozdov, Y. Drozdov, V. Zakamov, A. Lukyanov, L. Moldavskaya, A. Murel","doi":"10.1117/12.742377","DOIUrl":"https://doi.org/10.1117/12.742377","url":null,"abstract":"A new variant of fabricating of heterostructures with InAs quantum dots for infrared photodetectors by metalorganic chemical vapor deposition is discussed. A distinctive feature of the growth process is alternation of low and high temperature during growth of GaAs barrier layers. Sandwich structures with high density of quantum dots with high \"aspect ratio\" value have been grown by use of increased time of quantum dots growth. In these structures photoconductivity near to 4.5 μm is observed up to 200K. Responsitivity is O.5A/W at a temperature of 90K, detectivity is 3*109 cmHz1/2W-1. Peculiarities of lateral infrared photoconductivity and electron transport in heterostructures with quantum dots and the two-dimensional electron channel connected with change in the mobility of 2D electrons caused by photoionization of quantum dots are shown. The first observation of the lateral intraband infrared photoconductivity in non-doped structures at additional photoexcitation as well as lateral interband photoconductivity in the range 1-2.7 μm at room temperature is reported.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127680998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasmon-phonon interaction in α-Ag2Se thin films α-Ag2Se薄膜中等离子体-声子相互作用
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742526
Sh. M. Alekperova, A. Aliyev, K. Jalilova, G. S. Gadjiyeva
{"title":"Plasmon-phonon interaction in α-Ag2Se thin films","authors":"Sh. M. Alekperova, A. Aliyev, K. Jalilova, G. S. Gadjiyeva","doi":"10.1117/12.742526","DOIUrl":"https://doi.org/10.1117/12.742526","url":null,"abstract":"For the first time on the experimental IR reflection spectra R(λ) of α -Ag2Se films with charge carrier concentration 4,0 x 1018 cm-3 at 300 K behind of plasma minimum (1150 cm-1) are detected two further minimums (800 cm-1 and 550cm-1), stipulated by interaction of plasmon and long-wave optical (LO) phonons. It was founded the peculiarities in the behaviour of the optical function (ε1; ε2; -Im ε-1) at the interaction of the free charge carrier with the polarizable ions of lattice oscillations. The frequency of longitudinal and transversal phonons is calculated.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124063055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser-and-holographic complex for technological and certification control of optical elements and objectives in infrared spectral region of 3-12 μm 用于3-12 μm红外光谱范围内光学元件和物镜工艺和认证控制的激光全息复合体
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742638
Alexander S. Duchitskiy, A. V. Lukin, S. Mavrin, A. Melnikov
{"title":"Laser-and-holographic complex for technological and certification control of optical elements and objectives in infrared spectral region of 3-12 μm","authors":"Alexander S. Duchitskiy, A. V. Lukin, S. Mavrin, A. Melnikov","doi":"10.1117/12.742638","DOIUrl":"https://doi.org/10.1117/12.742638","url":null,"abstract":"We have considered here a functional scheme, peculiarities of operation, advantages and prospectives of using of a laser-and- holographic complex created in Federal State Unitary Enterprise \"Scientific-and-Production Association \"State Institute of Applied Optics' (FGUP \"NPO \"GIPO\"). The complex is intended for technological and certification control of separate optical elements as well as objectives in infrared spectral region of 3-12 μm.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127629611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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