Ch. D. Jalilova, A. Aliyev, N. V. Faradjev, Sh. M. Alekperova
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The features of the electrical, optical and photoelectric properties of gallium (Ga) doped Pb1-xSnxSe (0,03 less than or equal to x less than or equal to 0,07) epitaxial films (NGaO,5l at%) obtained by the molecular beam condensation method (MBC) are investigated. It is established that the interband absorption edge are stipulated from nondirect transition, the value of band gap (Eg), temperature coefficient of Eg are calculated. The conditions of preparing metal - Pb1-xSnxSe photodiode structures are determined and capacity temperature dependence of metal - Pb1-xSnxSe structure are analysed. The current-voltage and capacity-voltage characteristics of the obtained photodiodes.
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