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Physical and material science aspects of integrated optoelectronics 集成光电子学的物理和材料科学方面
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742309
O. Ermakov
{"title":"Physical and material science aspects of integrated optoelectronics","authors":"O. Ermakov","doi":"10.1117/12.742309","DOIUrl":"https://doi.org/10.1117/12.742309","url":null,"abstract":"Physical, material science and technological aspects (adequate material and substrate choice, different physical effects and limitations of modern simulation methods) are discussed. Analysis of modern microelectronics and optoelectronics development trends shows that rigid boundaries between microoelectronics and optoelectronics are smearing. Wide materials range previously used only in optoelectronics ( A3 B5 - , A2 B6 -, A4 B4 - compounds, their sold alloys, diamond, organic material etc.) are now of interest for LSI designers also. Although wide range of different substrates types (organic and inorganic, single crystalline and amorphous, rigid and flexible) are now used in optoelectronics optically transparent and electrically insulating substrates are preferable for integrated optoelectronics. One type of such substrates namely sapphire is of essential practical interest now because silicon on sapphire (SOS) structures are used for LSI implementation and gallium nitride and its alloys on sapphire stwctures (GNS) are used for super bright LEDs, LDs and photodetectors fabrication. Special attention is paid to optical properties of organic structures as very promising media both for integrated optoelectronics and microelectronics. Different physical effects (band structure, quantum, disorder, strain, carrier heating effects) as well as limitations of modern simulation methods are discussed.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116811168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computer modeling of image intensifiers and photoelectron guns for time-resolved electron diffraction experiments 用于时间分辨电子衍射实验的图像增强器和光电子枪的计算机建模
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742336
S. Andreev, D. Greenfield, V. P. Degtyareva, M. Monastyrskiy, V. A. Tarasov, M. Schelev
{"title":"Computer modeling of image intensifiers and photoelectron guns for time-resolved electron diffraction experiments","authors":"S. Andreev, D. Greenfield, V. P. Degtyareva, M. Monastyrskiy, V. A. Tarasov, M. Schelev","doi":"10.1117/12.742336","DOIUrl":"https://doi.org/10.1117/12.742336","url":null,"abstract":"The first part of the work is devoted to the problem of computer simulation of static image intensifiers and streak image tubes. The most peculiar and sensible points of the simulation, such as image curvature surface, aberration coefficients, spatial and temporal resolution along the work area, are illustrated on typical examples. The problem of image curvature correction is discussed as well. The second part of the work outlines the theoretical grounds and results of computer-aided design of a principally new photoelectron-optical system with time-depending fields capable of essential compressing of electron bunches for the needs of time-resolved electron diffraction (TRED) experiments. Some recent experimental results on the bunch compressing obtained with the newly designed and manufactured photoelectron gun are presented.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117021803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ultimate sensitivity of receiving devices keeping CO2-quantum amplifier and staring thermal imager 接收器件的终极灵敏度保持co2量子放大器和凝视热像仪
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742646
A. N. Sviridov
{"title":"Ultimate sensitivity of receiving devices keeping CO2-quantum amplifier and staring thermal imager","authors":"A. N. Sviridov","doi":"10.1117/12.742646","DOIUrl":"https://doi.org/10.1117/12.742646","url":null,"abstract":"The calculations of ultimate thresholds of receiving devices with CO2-quantum amplifiers (RD with QA) intended for lidars and active systems of vision are conducted.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126040991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation-proof photodetectors for spectral region 0.35÷1.1 μm 光谱区域防辐射光电探测器0.35÷1.1 μm
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742320
K. Askerov, M. G. Bektashi, V. I. Gadzhiyeva, D. Abdinov
{"title":"Radiation-proof photodetectors for spectral region 0.35÷1.1 μm","authors":"K. Askerov, M. G. Bektashi, V. I. Gadzhiyeva, D. Abdinov","doi":"10.1117/12.742320","DOIUrl":"https://doi.org/10.1117/12.742320","url":null,"abstract":"Article is devoted to development and research of radiation resistance of photodiodes on the basis of layered compounds ЭaCe, БlHCe, ЭaTe intended for visible and near IR-region of a spectrum and the process of diffusion of various impurity in layered semiconductors. It is shown that in new manufacturing techniques of photodiode structures initial materials ЭaCe, ЭaTe and БlHCe were exposed to influence ionizing irradiations at small fluences, and then on them processes of diffusion of compensating elements with preliminary annealing were made. Specified changes in technology of reception of photosensitive elements have allowed to receive photodiode structures with more than five elements. Radiation resistance of the researched photodiodes have been determined and the opportunity of their use under conditions of high radiation is revealed.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126587686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide-sized photo receiving matrix devices of IR spectrum range 红外光谱范围宽尺寸光接收矩阵器件
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742291
A. V. Boroshnev
{"title":"Wide-sized photo receiving matrix devices of IR spectrum range","authors":"A. V. Boroshnev","doi":"10.1117/12.742291","DOIUrl":"https://doi.org/10.1117/12.742291","url":null,"abstract":"Matrix photoreception IR devices (MPRD) are of interest for use in various areas. In particular, such devices are demanded in defensive systems, in systems on detection and preventing of extraordinary situations, meteorology, astronomy and others. The main characteristics of MPRDs are: quantify of threshold, spectrum range of photo sensibi1ity size of pixels, which complete the matrix; number of these pixels that determine the format of the matrix. Multiplexer, that provides control and transformation of parallel images of entering flashing into a sequence of electric signals, is a main element of the photo receiving matrixes.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124304184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transparency of electromagnetic radiation receivers 电磁辐射接收器的透明度
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742338
R. -. Kasimov, R. Karamaliev
{"title":"Transparency of electromagnetic radiation receivers","authors":"R. -. Kasimov, R. Karamaliev","doi":"10.1117/12.742338","DOIUrl":"https://doi.org/10.1117/12.742338","url":null,"abstract":"The conditions of reflectionless quenching of electromagnetic radiation in the system consisting of semi-infinite absorbing substrate and consistently superimposed on it two non-adsorbing layers of a coat are found.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125531283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
About mechanisms of anomalous photovoltage effect in CdTe films CdTe薄膜中异常光电压效应的机理研究
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742553
G. A. Nabiev
{"title":"About mechanisms of anomalous photovoltage effect in CdTe films","authors":"G. A. Nabiev","doi":"10.1117/12.742553","DOIUrl":"https://doi.org/10.1117/12.742553","url":null,"abstract":"In the work a method of discrimination of exposure skewness contribution and differences of p-n and n-p junctions of p-n-p structure to the anomalous photovoltage effect (APV-effect) in the films of cadmium telluride is suggested.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130542504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spectral filtration of images in the IR spectral region with use of phenomenon of total internal reflection 利用全内反射现象对红外光谱区域的图像进行光谱过滤
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742519
Anatoly M. Filachev, L. Saginov, A. S. Kononov, A. N. Sviridov, Vladimir L. Bakumenko
{"title":"Spectral filtration of images in the IR spectral region with use of phenomenon of total internal reflection","authors":"Anatoly M. Filachev, L. Saginov, A. S. Kononov, A. N. Sviridov, Vladimir L. Bakumenko","doi":"10.1117/12.742519","DOIUrl":"https://doi.org/10.1117/12.742519","url":null,"abstract":"Parameter calculations were carried of filtering devices in one of which the phenomenon of the total internal reflection was used. It is expected that these devices may be suitable for imagery of objects in the given narrow spectral bands - spectral imaging (SI) and for obtaining the spectral maps of fast flowing past processes.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132514531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron-beam processing effect on photoemitting-structures parameters and the noise factor of microchannel plates 电子束处理对微通道板发光结构参数及噪声因子的影响
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742340
S. Avdeev, A. Kravchenko, E. Gusev, S. Petrov
{"title":"Electron-beam processing effect on photoemitting-structures parameters and the noise factor of microchannel plates","authors":"S. Avdeev, A. Kravchenko, E. Gusev, S. Petrov","doi":"10.1117/12.742340","DOIUrl":"https://doi.org/10.1117/12.742340","url":null,"abstract":"This paper presents invesigation findings of electron-beam influence on parameters and characteristics of trialcali and bialkali photocathocles of vacuum photoelectric devices and electron-beam amplification channels modification of microchannel plate image intensifier (MCP) of the electrooptical transducer. The electron-beam processing (EBP) increases total sensitivity by 10 - 12% and reduces spoilage in photocathode production to a fourth. The noise factor of MCP subjected EBP before recovery procedure MCP, reduces in 1.5 - 2.0 times, the sensibility of electrooptical transducer increases.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134039316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Imaging spectrometer with application of a multi-beam interference 多光束干涉成像光谱仪的应用
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI: 10.1117/12.742645
A. N. Sviridov, Anatoly M. Filachev, L. Saginov, A. S. Kononov
{"title":"Imaging spectrometer with application of a multi-beam interference","authors":"A. N. Sviridov, Anatoly M. Filachev, L. Saginov, A. S. Kononov","doi":"10.1117/12.742645","DOIUrl":"https://doi.org/10.1117/12.742645","url":null,"abstract":"The filtering device on the basis multiplex the Fabry-Perot interferometers and imaging spectrometer keeping this device and a matric thermal imager is offered. The calculations of parameters of this filtering device and imaging spectrometer are conducted. It is expected that the similar devices can be suitable for imagery of objects in given narrow spectral ranges.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121441322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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