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Relaxation of electrical properties of epitaxial CdxHg1-xTe:As(Sb) layers converted into n-type by ion milling CdxHg1-xTe外延层电性能的弛豫:离子铣削转化为n型的As(Sb)层
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-04-26 DOI: 10.1117/12.742604
I. Izhnin, V. Bogoboyashchyy, A. Vlasov, K. Mynbaev, M. Pociask
{"title":"Relaxation of electrical properties of epitaxial CdxHg1-xTe:As(Sb) layers converted into n-type by ion milling","authors":"I. Izhnin, V. Bogoboyashchyy, A. Vlasov, K. Mynbaev, M. Pociask","doi":"10.1117/12.742604","DOIUrl":"https://doi.org/10.1117/12.742604","url":null,"abstract":"Results of the studies of relaxation of electhcal properties of As- and Sb-doped CdxHg1-xTe epitaxial layers, which were converted into n-type by ion milling (TM), are presented. It is demonstrated that donor complexes, which are formed under IM and are responsible for p-to-n conductivity type conversion, are not stable, and their concentration decreases upon storage even at the room temperature. The relaxation at room temperature results in electron concentration in converted layers decreasing from the initial value of ~(2-3)x 1015 cm right after the milling down to the value of ~l015 cm-3. Increasing the temperature of the storage speeds up the relaxation. The process responsible for the relaxation appeared to be the disintegration of the donor complexes, which starts after the end of the IM and is caused by the decrease in concentration of interstitial mercury atoms, generated by milling.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128382093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties MBE在Si(310)衬底上生长HgCdTe异质结构:结构和电物理性质
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-04-26 DOI: 10.1117/12.742600
M. Yakushev, A. Babenko, V. Varavin, V. Vasil’ev, L. V. Mironova, D. N. Pridachin, V. G. Remesnik, I. V. Sabrinina, Yu. G. Sidorov, A. Suslyakov
{"title":"HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties","authors":"M. Yakushev, A. Babenko, V. Varavin, V. Vasil’ev, L. V. Mironova, D. N. Pridachin, V. G. Remesnik, I. V. Sabrinina, Yu. G. Sidorov, A. Suslyakov","doi":"10.1117/12.742600","DOIUrl":"https://doi.org/10.1117/12.742600","url":null,"abstract":"Molecular beam epitaxy has been used for the growth of Hg1-xCdxTe layers (x = 0.30 - 0.34) on Si(310) substrates. The grown structures were characterized by Hall measurements for carrier density and mobility. The densities of stacking faults, threading dislocations, antiphase boundaries and macroscopic V-defects were determined by selective chemical etching. The 128 x 128 photodiode array with wavelength cut-off λ1/2(77K) = 4.07 μm was fabricated with good photoelectric parameters.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129062549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Functionalities of the CdSe1-xTex films in IR region of spectrum CdSe1-xTex薄膜在红外光谱中的功能
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-04-26 DOI: 10.1117/12.742597
A. Abdinov, M. Jafarov, E. Nasirov, S. Mamedova
{"title":"Functionalities of the CdSe1-xTex films in IR region of spectrum","authors":"A. Abdinov, M. Jafarov, E. Nasirov, S. Mamedova","doi":"10.1117/12.742597","DOIUrl":"https://doi.org/10.1117/12.742597","url":null,"abstract":"In this work the results on the investigation of the photosensitivity near the IR region of the CdSe1-xTex (O less than or equal to x less than or equal to O.4) films. with thickness 0.5÷2μm, prepared on glass-ceramic substrates by precipitation from aqueous solution are presented. The temperature dependence of dark and light conductivity, spectrum of primary and impurity photoconductivity has been investigated.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123506560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photodetectors for visible and near infra-red region with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements 基于稀土元素掺杂p-GaSe单晶的可见光和近红外区可控灵敏度光电探测器
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-04-26 DOI: 10.1117/12.742329
A. Abdinov, R. Babayeva, A. Bagirova, R. Rzaev
{"title":"Photodetectors for visible and near infra-red region with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements","authors":"A. Abdinov, R. Babayeva, A. Bagirova, R. Rzaev","doi":"10.1117/12.742329","DOIUrl":"https://doi.org/10.1117/12.742329","url":null,"abstract":"Under various external conditions the features of initial and sensitized photoconductivity in p-GaSe with NREE ≈ 0÷10-1 at. % have been investigated. It is established that in the initial state investigated crystals possess photosensitivity only in the intrinsicl absorption region, photoelectric threshold and a relaxation velocity vary with change of NREE. Under the influence by intrinsic highlight with relatively high intensity, or an external electric voltage (U) greater some critical value, investigated samples acquire photosensitivity also in the impurity region. It is supposed that the sensitization of the impurity photoconductivity in this material is connected to presence in the forbidden band of shallow trapping levels which concentration grows with increasing NREE. The opportunity of the creation of highly stable photodetectors for visible and near IR irradiation with controlled sensitivity on the base of p-GaSe crystals has been shown.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122679973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MCT epitaxial layers characterization from IR transmittance spectra 红外透射光谱表征MCT外延层
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-04-26 DOI: 10.1117/12.742296
K. Boltar, N. I. Yakovleva
{"title":"MCT epitaxial layers characterization from IR transmittance spectra","authors":"K. Boltar, N. I. Yakovleva","doi":"10.1117/12.742296","DOIUrl":"https://doi.org/10.1117/12.742296","url":null,"abstract":"Transmittance spectra of epitaxial layers grown on the basis of mercury and cadmium telluride (MCT) alloys have been measured within the wavelength number range of (5000 cm-1<ν<500 cm-1). P-type epitaxial layers were grown both by liquid-phase epitaxy method (LPE) on CdZnTe substrates and molecular-beam epitaxy (MBE) on GaAs substrates. The MCT layer parameters such as epitaxial layer thickness d, cutoff wavelength λ05, composition x were calculated from the spectra. JR transmittance spectra simulation method was developed to determine the semiconductor multilayer structures characteristics. Fourier Transform (FT) method was suggested to determine the thickness of MCT epitaxial layers.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127903206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Abilities of Russian digital CCD cameras of serial manufacture for astronomical applications 俄罗斯天文用数字CCD相机系列生产能力
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-04-26 DOI: 10.1117/12.742381
V. Komarov, Anton V. Komarov
{"title":"Abilities of Russian digital CCD cameras of serial manufacture for astronomical applications","authors":"V. Komarov, Anton V. Komarov","doi":"10.1117/12.742381","DOIUrl":"https://doi.org/10.1117/12.742381","url":null,"abstract":"There is the presentation of investigation results of last native elaborations of b/w high sensitive CCD cameras for optical telescope application. By the example of SDU-259 camera (000\"Specteletehnika\", Moscow) capability of its use as a digitized TV guiding camera for large optical telescopes is demonstrated. In SAO RAS there is constructed SDU-259C camera with termoelectric cooler equipped. The parameters of CCD camera SDU-259C and its test results when used with 10 inch telescope \"Meade LXD-55\" are given.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133909949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Uncooled PEM detector of the CO2-laser radiation 二氧化碳激光辐射的非冷却PEM探测器
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-04-26 DOI: 10.1117/12.742332
A. Aliyev, T. Ibragimov, N. Ismailov, I. Nasibov, E. Huseynov
{"title":"Uncooled PEM detector of the CO2-laser radiation","authors":"A. Aliyev, T. Ibragimov, N. Ismailov, I. Nasibov, E. Huseynov","doi":"10.1117/12.742332","DOIUrl":"https://doi.org/10.1117/12.742332","url":null,"abstract":"Uncooled photoelectromagnetic detectors (PEM-detector) on the basis of cadmium - mercury telluride solid solutions of composition x < 0.2 find application in opto-electronic systems with use of the C02-laser radiation with wave-length of 10.6 μM. [1] To advantages of such detectors it is possible to attribute absence of an external electric supply that reduces a level of noise and considerably reduces thermal loading on photodetector as well as it is a high speed responsivity that allows to use them in heterodyne systems of registration. The theoretical calculations of parameters of PEM detector has been carried out and results of development and research of uncooled PEM-detector on basis of CdxHg1-xTe with x=0.2 of 6÷7 μm range of spectrum are represented by us in paper [2]. At the heart of work the researches of parameters of the PEM detector depending on a level of acceptor doping of the semiconductor have been discounted. In the present work the results of research of an opportunity of increasing of parameters of the PEM detector on basis of CdxHg1-xTe with x = 0.167 corresponding to a maximum of spectral sensitivity on wave-length of 10.6 μm at room temperature are represented.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129150243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The p-n junctions on the basis of CdxHg1-xTe obtained by low-energy treatment with indium and argon ions 在CdxHg1-xTe的基础上，用铟和氩离子低能处理得到了p-n结
International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-04-26 DOI: 10.1117/12.742617
N. Ismayilov, E. Huseynov, I. Hasanov, S. Heydarov
{"title":"The p-n junctions on the basis of CdxHg1-xTe obtained by low-energy treatment with indium and argon ions","authors":"N. Ismayilov, E. Huseynov, I. Hasanov, S. Heydarov","doi":"10.1117/12.742617","DOIUrl":"https://doi.org/10.1117/12.742617","url":null,"abstract":"The results of experimental research of properties of photodiode structures based on CdxHg1-xTe fabricated by method of treatment of p-type material surface with indium ions with energy 1-5 keV and argon ions with energy 250 eV are introduced. By analysis of electrical and photoelectrical properties obtained structures made conclusion about more quality structure obtained by treatment with indium ions than one with argon ions. Supposed that it is related with more than two order less closes of indium ions than argon ions required to from the conversion layer.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"456 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122726102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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