N. Ismayilov, E. Huseynov, I. Hasanov, S. Heydarov
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The p-n junctions on the basis of CdxHg1-xTe obtained by low-energy treatment with indium and argon ions
The results of experimental research of properties of photodiode structures based on CdxHg1-xTe fabricated by method of treatment of p-type material surface with indium ions with energy 1-5 keV and argon ions with energy 250 eV are introduced. By analysis of electrical and photoelectrical properties obtained structures made conclusion about more quality structure obtained by treatment with indium ions than one with argon ions. Supposed that it is related with more than two order less closes of indium ions than argon ions required to from the conversion layer.
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