{"title":"红外透射光谱表征MCT外延层","authors":"K. Boltar, N. I. Yakovleva","doi":"10.1117/12.742296","DOIUrl":null,"url":null,"abstract":"Transmittance spectra of epitaxial layers grown on the basis of mercury and cadmium telluride (MCT) alloys have been measured within the wavelength number range of (5000 cm-1<ν<500 cm-1). P-type epitaxial layers were grown both by liquid-phase epitaxy method (LPE) on CdZnTe substrates and molecular-beam epitaxy (MBE) on GaAs substrates. The MCT layer parameters such as epitaxial layer thickness d, cutoff wavelength λ05, composition x were calculated from the spectra. JR transmittance spectra simulation method was developed to determine the semiconductor multilayer structures characteristics. Fourier Transform (FT) method was suggested to determine the thickness of MCT epitaxial layers.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MCT epitaxial layers characterization from IR transmittance spectra\",\"authors\":\"K. Boltar, N. I. Yakovleva\",\"doi\":\"10.1117/12.742296\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transmittance spectra of epitaxial layers grown on the basis of mercury and cadmium telluride (MCT) alloys have been measured within the wavelength number range of (5000 cm-1<ν<500 cm-1). P-type epitaxial layers were grown both by liquid-phase epitaxy method (LPE) on CdZnTe substrates and molecular-beam epitaxy (MBE) on GaAs substrates. The MCT layer parameters such as epitaxial layer thickness d, cutoff wavelength λ05, composition x were calculated from the spectra. JR transmittance spectra simulation method was developed to determine the semiconductor multilayer structures characteristics. Fourier Transform (FT) method was suggested to determine the thickness of MCT epitaxial layers.\",\"PeriodicalId\":160828,\"journal\":{\"name\":\"International Conference on Photoelectronics and Night Vision Devices\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Photoelectronics and Night Vision Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.742296\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Photoelectronics and Night Vision Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.742296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MCT epitaxial layers characterization from IR transmittance spectra
Transmittance spectra of epitaxial layers grown on the basis of mercury and cadmium telluride (MCT) alloys have been measured within the wavelength number range of (5000 cm-1<ν<500 cm-1). P-type epitaxial layers were grown both by liquid-phase epitaxy method (LPE) on CdZnTe substrates and molecular-beam epitaxy (MBE) on GaAs substrates. The MCT layer parameters such as epitaxial layer thickness d, cutoff wavelength λ05, composition x were calculated from the spectra. JR transmittance spectra simulation method was developed to determine the semiconductor multilayer structures characteristics. Fourier Transform (FT) method was suggested to determine the thickness of MCT epitaxial layers.
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