HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties

Abstract

Molecular beam epitaxy has been used for the growth of Hg1-xCdxTe layers (x = 0.30 - 0.34) on Si(310) substrates. The grown structures were characterized by Hall measurements for carrier density and mobility. The densities of stacking faults, threading dislocations, antiphase boundaries and macroscopic V-defects were determined by selective chemical etching. The 128 x 128 photodiode array with wavelength cut-off λ1/2(77K) = 4.07 μm was fabricated with good photoelectric parameters.