{"title":"CdTe薄膜中异常光电压效应的机理研究","authors":"G. A. Nabiev","doi":"10.1117/12.742553","DOIUrl":null,"url":null,"abstract":"In the work a method of discrimination of exposure skewness contribution and differences of p-n and n-p junctions of p-n-p structure to the anomalous photovoltage effect (APV-effect) in the films of cadmium telluride is suggested.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"About mechanisms of anomalous photovoltage effect in CdTe films\",\"authors\":\"G. A. Nabiev\",\"doi\":\"10.1117/12.742553\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the work a method of discrimination of exposure skewness contribution and differences of p-n and n-p junctions of p-n-p structure to the anomalous photovoltage effect (APV-effect) in the films of cadmium telluride is suggested.\",\"PeriodicalId\":160828,\"journal\":{\"name\":\"International Conference on Photoelectronics and Night Vision Devices\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Photoelectronics and Night Vision Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.742553\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Photoelectronics and Night Vision Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.742553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
About mechanisms of anomalous photovoltage effect in CdTe films
In the work a method of discrimination of exposure skewness contribution and differences of p-n and n-p junctions of p-n-p structure to the anomalous photovoltage effect (APV-effect) in the films of cadmium telluride is suggested.
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