Electrical properties of the metal-semiconductor structures on the basis of Pb1-xMnxTe

Abstract

The effect of an annealing at 100-110 °C on contact resistance (rk) and adhesive strength of the contacts to Pb1-xMnxTe/ (In-Ag-Au) structure in the temperature range ~77-300K have been investigated. It is found out that the effect of an annealing on rk is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the formation of an intermediate phases such as Ag2Te.