T. D. Aliyeva, G. D. Abdinova, N. Akhundova, B. S. Barkhalov
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引用次数: 0
摘要
在~77 ~ 300k温度范围内，研究了100 ~ 110℃退火对Pb1-xMnxTe/ (in - ag - au)结构接触电阻(rk)和接触强度的影响。结果表明，退火对rk的影响主要是由于In和Ag原子在接触区域的扩散和晶体体积的增大以及Ag2Te等中间相的形成。
Electrical properties of the metal-semiconductor structures on the basis of Pb1-xMnxTe
The effect of an annealing at 100-110 °C on contact resistance (rk) and adhesive strength of the contacts to Pb1-xMnxTe/ (In-Ag-Au) structure in the temperature range ~77-300K have been investigated. It is found out that the effect of an annealing on rk is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the formation of an intermediate phases such as Ag2Te.
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