Organic materials and structures for photoelectronics

O. Ermakov, M. Kaplunov, O. Efimov, Sergey A. Stacharny
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Abstract

Brief history and development trends of organic materials based photosensitive devices including home activities in this field are presented. New home-made organic materials are briefly reviewed including DA - BuTAZ, Zn ( OB-pDA), Zn (OBGO)2 , Zn (OBBA)2 PTA. Data are presented for new organic materials optical properties (both photoluminescence and absorption) in the wide spectral range. It's noted that large Stokes shift is generally observed between optical absorption and luminescence bands. Two layer device structures characteristics have been studied. Data are presented for their current-voltage and photoelectric characteristics. It's noted that photosensitivity spectra have complicated character resembling that of absorption its maximum being located in UV spectral region. Comparison between organic and inorganic photodetectors is presented. Several differences are observed namely power-law current-voltage dependence and essential increase of photosensitivity with applied voltage.
光电子用有机材料和结构
介绍了基于有机材料的光敏器件的历史和发展趋势,包括在该领域的家庭活动。综述了新型国产有机材料:DA - BuTAZ、Zn (OB-pDA)、Zn (OBGO)2、Zn (OBBA)2 PTA。介绍了新型有机材料在宽光谱范围内的光学特性(光致发光和吸收)。值得注意的是,在光学吸收带和发光带之间通常观察到较大的斯托克斯位移。研究了两层器件的结构特性。给出了它们的电流电压和光电特性数据。光敏光谱具有类似于吸收光谱的复杂特征,其最大值位于紫外光谱区。对有机光电探测器和无机光电探测器进行了比较。观察到几个差异,即幂律电流-电压依赖性和光敏性随施加电压的本质增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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