基于n-和p- MBE HgCdTe的miss结构电压-电容曲线分析

International Conference on Photoelectronics and Night Vision Devices Pub Date : 2007-05-06 DOI:10.1117/12.742637

V. N. Ovsyuk, A. V. Yartsev

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引用次数: 19

摘要

分析了基于MBE HgCdTe的MIS结构的C-V曲线的有功部分和无功部分。结果表明，HgCdTe - Si02约束的表面态密度为2.4 1011 cm-2。该值不取决于电导率类型和渐变带隙的存在。n-CdHgTe以表面复合为主要机制。

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Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe

The active and reactive part of C-V curve of MIS structure based on MBE HgCdTe is analyzed. It's shown, that HgCdTe - Si02 confine has a surface states density equal to 2.4 1011 cm-2. This value is not depended from conductivity type and graded-band gap presence. The n-CdHgTe has surface recombination as dominant mechanism.

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International Conference on Photoelectronics and Night Vision Devices

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