{"title":"碲化镉薄膜中光电驻极体状态的捕获水平参数的测定","authors":"G. A. Nabiev","doi":"10.1117/12.742644","DOIUrl":null,"url":null,"abstract":"In the paper, an ability of determination of capture levels parameters, which are responsible for photoelectret state using relaxation curves in silver-doped cadmium telluride films have been studied.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Determination of capture levels parameters responsible for photoelectret state in cadmium telluride films\",\"authors\":\"G. A. Nabiev\",\"doi\":\"10.1117/12.742644\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the paper, an ability of determination of capture levels parameters, which are responsible for photoelectret state using relaxation curves in silver-doped cadmium telluride films have been studied.\",\"PeriodicalId\":160828,\"journal\":{\"name\":\"International Conference on Photoelectronics and Night Vision Devices\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Photoelectronics and Night Vision Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.742644\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Photoelectronics and Night Vision Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.742644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determination of capture levels parameters responsible for photoelectret state in cadmium telluride films
In the paper, an ability of determination of capture levels parameters, which are responsible for photoelectret state using relaxation curves in silver-doped cadmium telluride films have been studied.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
