发布求助
文献互助 智能选刊 最新文献

2023 IEEE International Reliability Physics Symposium (IRPS)最新文献

筛选
英文 中文
Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology 基于Intel 4 CMOS技术的先进FinFET晶体管可靠性研究
2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI: 10.1109/IRPS48203.2023.10117992
M. Jamil, S. Mukhopadhay, M. Ghoneim, A. Shailos, C. Prasad, I. Meric, S. Ramey
{"title":"Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology","authors":"M. Jamil, S. Mukhopadhay, M. Ghoneim, A. Shailos, C. Prasad, I. Meric, S. Ramey","doi":"10.1109/IRPS48203.2023.10117992","DOIUrl":"https://doi.org/10.1109/IRPS48203.2023.10117992","url":null,"abstract":"The Intel 4 CMOS FinFET technology delivers over 20% performance gains at iso-power over the prior generation (Intel 7). This paper reports reliability studies on the Intel 4 technology that demonstrate matched or better reliability while extending Moore's law in the areas of power, performance, and scaling over its predecessor. Industry-leading technology scaling comes with numerous challenges, including co-optimization of yield, performance, and reliability. This paper reports the development of Intel 4 technology with industry-standard reliability while delivering significant advancement in generational performance and density.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123299108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept 工程定制TLP I-V特性，采用可控硅二极管系列ESD保护概念
2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI: 10.1109/IRPS48203.2023.10118220
H. B. Variar, S. K. Gautam, Ashita Kumar, K. M. Amogh, Juan Luo, Ning Shi, D. Marreiro, S. Mallikarjunaswamy, M. Shrivastava
{"title":"Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept","authors":"H. B. Variar, S. K. Gautam, Ashita Kumar, K. M. Amogh, Juan Luo, Ning Shi, D. Marreiro, S. Mallikarjunaswamy, M. Shrivastava","doi":"10.1109/IRPS48203.2023.10118220","DOIUrl":"https://doi.org/10.1109/IRPS48203.2023.10118220","url":null,"abstract":"This work demonstrates an SCR-Diode series ESD Protection concept, which can be engineered to provide a custom TLP I-V characteristic. SCRs and diodes with dimensional variations have been used in different combinations and width ratios, which results in a range of TLP I-V characteristics. This protection circuit comes with several advantages as adaptability for various ESD protection windows, the benefits of using SCR as a protection device and the ease of designing the circuit. Along with TCAD studies, experimental data demonstrates that N-well and P-well doping of SCR can be used to further tune the Vhold and Ron of the protection circuit.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131497862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarity Dependency of MOL-TDDB in FinFET moltddb在FinFET中的极性依赖性
2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI: 10.1109/IRPS48203.2023.10117774
Manisha Sharma, Hokyung Park, Yinghong Zhao, Ki-Don Lee, Liangshan Chen, J. Yoon, R. Ranjan, Caleb Dongkyan Kwon, H. Shim, M. Yeo, Shin-Young Chung, J. Haefner
{"title":"Polarity Dependency of MOL-TDDB in FinFET","authors":"Manisha Sharma, Hokyung Park, Yinghong Zhao, Ki-Don Lee, Liangshan Chen, J. Yoon, R. Ranjan, Caleb Dongkyan Kwon, H. Shim, M. Yeo, Shin-Young Chung, J. Haefner","doi":"10.1109/IRPS48203.2023.10117774","DOIUrl":"https://doi.org/10.1109/IRPS48203.2023.10117774","url":null,"abstract":"Stress polarity dependency of MOL-TDDB (Middle of Line-Time Dependent Dielectric Breakdown) is investigated on FinFET devices. Due to asymmetry in spacer dielectrics between Gate (PC) and Contact (CA), MOL-TDDB reliability can be different by bias polarity. From Vramp and TDDB evaluations, we observed MOL-TDDB reliability becomes worse when positive bias is applied to the CA side. Leakage current analysis and energy band diagram study suggested this reliability degradation can be explained by either more trap generation or more electron trapping in high-k layer (on PC side). This behavior can be suppressed by Vt-tuning capping layer.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"208 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131748237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologies 三栅极技术的各种非状态击穿方法的详细比较
2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI: 10.1109/IRPS48203.2023.10117954
K. Joshi, D. Nminibapiel, M. Ghoneim, D. Ali, R. Ramamurthy, L. Pantisano, I. Meric, S. Ramey
{"title":"A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologies","authors":"K. Joshi, D. Nminibapiel, M. Ghoneim, D. Ali, R. Ramamurthy, L. Pantisano, I. Meric, S. Ramey","doi":"10.1109/IRPS48203.2023.10117954","DOIUrl":"https://doi.org/10.1109/IRPS48203.2023.10117954","url":null,"abstract":"The source-drain punch-through current in off-state TDDB stress (OSS) is shown to significantly affect off-state breakdown behavior. This paper compares various OSS methodologies available in the literature and discusses how source-to-drain punch-through affects off-state breakdown and reliability. The proposed Drain-stress with Offset (DSO) OSS methodology limits punch-through to better reflect the actual field dependence of OSS breakdown for scaled tri-gate MOSFET technologies.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"44 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120874149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability of 3D NAND Flash for Future Storage Systems (Invited) 面向未来存储系统的3D NAND闪存可靠性研究(特邀)
2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI: 10.1109/IRPS48203.2023.10118280
A. Goda, K. K. Muchherla, Peter Feeley
{"title":"Reliability of 3D NAND Flash for Future Storage Systems (Invited)","authors":"A. Goda, K. K. Muchherla, Peter Feeley","doi":"10.1109/IRPS48203.2023.10118280","DOIUrl":"https://doi.org/10.1109/IRPS48203.2023.10118280","url":null,"abstract":"The 3D NAND Flash technologies have been successful, having realized the high density, high performance and highly reliable storage systems. With the continuous technology scaling, significant challenges and opportunities are expected in the future. SLC NAND technology plays a critical role for the high performance systems. The increased block size with further layer stacking requires innovative solutions to realize enhanced system performance and cost scaling. For the bits per cell (BPC) scaling beyond QLC, the reduction of the total cost of ownership (TCO) at the system level is the key. In this paper, we review and discuss the challenges and opportunities of 3D NAND reliability from the storage system perspectives.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131112800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Frequency on Reliability Of High-K MIM Capacitors 频率对高k MIM电容器可靠性的影响
2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI: 10.1109/IRPS48203.2023.10117790
X. Federspiel, A. Griffon, Marios Barlas, P. Lamontagne
{"title":"Effect of Frequency on Reliability Of High-K MIM Capacitors","authors":"X. Federspiel, A. Griffon, Marios Barlas, P. Lamontagne","doi":"10.1109/IRPS48203.2023.10117790","DOIUrl":"https://doi.org/10.1109/IRPS48203.2023.10117790","url":null,"abstract":"Dielectric relaxation phenomena in High-K capacitors have been reported to induce transitory effects. We present here a TDDB analysis including DC and pulsed DC stress applied on HK capacitors. We evidence a significant effect of frequency on TDDB. Using a model based on dielectric polarization dynamics, we found a good agreement with TDDB evolution with frequency but also a consistent behavior in terms of voltage acceleration factor as well as activation energy.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128086690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays 三端SOT-MTJ器件及相应阵列的全可靠性表征
2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI: 10.1109/IRPS48203.2023.10117643
Xinyi Xu, Hongchao Zhang, Chuanpeng Jiang, Jinhao Li, Shi-Ji Lu, Yunpeng Li, H. Du, Xueying Zhang, Zhaohao Wang, K. Cao, Weisheng Zhao, Shuqin Lyu, Hao Xu, Bonian Jiang, Le Wang, Bowen Man, Cong Zhang, Dandan Li, Shuhui Li, Xiaofei Fan, Gefei Wang, Hong-xi Liu
{"title":"Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays","authors":"Xinyi Xu, Hongchao Zhang, Chuanpeng Jiang, Jinhao Li, Shi-Ji Lu, Yunpeng Li, H. Du, Xueying Zhang, Zhaohao Wang, K. Cao, Weisheng Zhao, Shuqin Lyu, Hao Xu, Bonian Jiang, Le Wang, Bowen Man, Cong Zhang, Dandan Li, Shuhui Li, Xiaofei Fan, Gefei Wang, Hong-xi Liu","doi":"10.1109/IRPS48203.2023.10117643","DOIUrl":"https://doi.org/10.1109/IRPS48203.2023.10117643","url":null,"abstract":"We have systematically investigated the reliability performance of spin-orbit torque (SOT) magnetic random access memory (MRAM) devices, including electromigration (EM), stress migration (SM), endurance and data retention. The results show that the SOT-MRAM devices pass the EM requirement over 10 years lifetime under the operation condition, and pass the SM requirement over 1000 hours baking at 175°C. Moreover, high endurance close to 1014 cycles and robust data retention over 10 years storage time were demonstrated for the same SOT-MRAM devices. This full characterization fills the blank of SOT-MRAM reliability research and would contribute to the commercialization of the SOT-MRAM.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130583658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine Learning Based V-ramp VBD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk 基于机器学习的V-ramp VBD预测模型，利用ocd测量晶圆厂参数早期检测MOL可靠性风险
2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI: 10.1109/IRPS48203.2023.10117962
Sungman Rhee, Hyunjin Kim, Sangku Park, T. Uemura, Yuchul Hwang, S. Choo, Jinju Kim, H. Rhee, Shin-Young Chung
{"title":"Machine Learning Based V-ramp VBD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk","authors":"Sungman Rhee, Hyunjin Kim, Sangku Park, T. Uemura, Yuchul Hwang, S. Choo, Jinju Kim, H. Rhee, Shin-Young Chung","doi":"10.1109/IRPS48203.2023.10117962","DOIUrl":"https://doi.org/10.1109/IRPS48203.2023.10117962","url":null,"abstract":"In this paper, we propose for the first time a breakdown voltage $(mathrm{V}_{text{BD}})$ prediction method using structural parameters measured in-process for early detection of reliability risks in Middle-Of-Line (MOL). $boldsymbol{mathrm{V}_{text{BD}}}$ of the MOL is proportional to the distance of the Gate (PC) to Source/Drain-Contact (CA). Since PC to CA space can be calculated using MOL-related structural parameters at the early stage of the process, we created and validated models predicting V-ramp $boldsymbol{mathrm{V}_{text{BD}}}$ using five fab parameters measured in-process by optical critical dimension scatterometry (OCD). And we compared three modeling methods. The first is the geometrical calculation model (GCM), the second is multiple-linear-regression (MLR) method, and the last is the Multi-Layer Perceptions (MLP) model based on the machine learning (ML). We found the highest predictive consistency $boldsymbol{mathrm{R}^{2}0.6}$ in ML method, and it is expected to contribute to the early prediction of MOL V-ramp $mathrm{V}_{text{BD}}$ through additional consistency improvements.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116142274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parameters 铜互连中热致空洞的形成。主要物理参数的评估
2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI: 10.1109/IRPS48203.2023.10117870
Y. Ding, O. Pedreira, M. Lofrano, H. Zahedmanesh, T. Chavez, Hosain Farr, I. Wolf, K. Croes
{"title":"Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parameters","authors":"Y. Ding, O. Pedreira, M. Lofrano, H. Zahedmanesh, T. Chavez, Hosain Farr, I. Wolf, K. Croes","doi":"10.1109/IRPS48203.2023.10117870","DOIUrl":"https://doi.org/10.1109/IRPS48203.2023.10117870","url":null,"abstract":"Using a dedicated test structure, the main physical parameters of void formation due to thermomigration (TM) were assessed. Based on physical and electrical void-analyses, we experimentally determined the time to void nucleation and estimated the heat of transport parameter $Q^{ast}= 0.21$ eV for Cu interconnects with CD~1µm, Our studies show that TM has a 6x higher contribution to metal flux compared to the initial stress migration (SM) induced by the coefficient of thermal expansion (CTE) mismatch.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125827797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
OFF State Reliability Challenges of Monolayer WS2 FET Photodetector: Impact on the Dark and Photo-Illuminated State 单层WS2场效应晶体管光电探测器的关闭状态可靠性挑战:对暗态和光亮态的影响
2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI: 10.1109/IRPS48203.2023.10117978
Rupali Verma, Utpreksh Patbhaje, J. Kumar, A. Rai, M. Shrivastava
{"title":"OFF State Reliability Challenges of Monolayer WS2 FET Photodetector: Impact on the Dark and Photo-Illuminated State","authors":"Rupali Verma, Utpreksh Patbhaje, J. Kumar, A. Rai, M. Shrivastava","doi":"10.1109/IRPS48203.2023.10117978","DOIUrl":"https://doi.org/10.1109/IRPS48203.2023.10117978","url":null,"abstract":"This work reports the hot-hole injection-originated instability in the electrical characteristics (or the photodetection performance) of a monolayer WS2 Field Effect Transistor (FET) photodetector. When a reverse bias (i.e., OFF-state bias or negative gate voltage) temporal stress with a lateral electric field is applied under visible light illumination, the photocurrent is found to vary with time by up to 1 to 2 orders of magnitude. Instability in the dark current is also observed post the stress under illumination, which is reflected in the variation in the transfer and the output characteristics of the FET. The observations impose severe limitations on the reverse-biased back-gated FET for sensitive photodetection applications using transparent single-layer WS2 as the photoactive material.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121867223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信