Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept

H. B. Variar, S. K. Gautam, Ashita Kumar, K. M. Amogh, Juan Luo, Ning Shi, D. Marreiro, S. Mallikarjunaswamy, M. Shrivastava
{"title":"Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept","authors":"H. B. Variar, S. K. Gautam, Ashita Kumar, K. M. Amogh, Juan Luo, Ning Shi, D. Marreiro, S. Mallikarjunaswamy, M. Shrivastava","doi":"10.1109/IRPS48203.2023.10118220","DOIUrl":null,"url":null,"abstract":"This work demonstrates an SCR-Diode series ESD Protection concept, which can be engineered to provide a custom TLP I-V characteristic. SCRs and diodes with dimensional variations have been used in different combinations and width ratios, which results in a range of TLP I-V characteristics. This protection circuit comes with several advantages as adaptability for various ESD protection windows, the benefits of using SCR as a protection device and the ease of designing the circuit. Along with TCAD studies, experimental data demonstrates that N-well and P-well doping of SCR can be used to further tune the Vhold and Ron of the protection circuit.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10118220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This work demonstrates an SCR-Diode series ESD Protection concept, which can be engineered to provide a custom TLP I-V characteristic. SCRs and diodes with dimensional variations have been used in different combinations and width ratios, which results in a range of TLP I-V characteristics. This protection circuit comes with several advantages as adaptability for various ESD protection windows, the benefits of using SCR as a protection device and the ease of designing the circuit. Along with TCAD studies, experimental data demonstrates that N-well and P-well doping of SCR can be used to further tune the Vhold and Ron of the protection circuit.
工程定制TLP I-V特性,采用可控硅二极管系列ESD保护概念
这项工作展示了一个可控硅二极管系列ESD保护概念,它可以设计为提供定制的TLP I-V特性。尺寸变化的晶闸管和二极管以不同的组合和宽度比使用,从而产生一系列的TLP I-V特性。这种保护电路具有几个优点,如适应各种ESD保护窗口,使用可控硅作为保护器件的好处,以及易于设计电路。结合TCAD的研究,实验数据表明,利用可控硅的n阱和p阱掺杂可以进一步调谐保护电路的Vhold和Ron。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信