H. B. Variar, S. K. Gautam, Ashita Kumar, K. M. Amogh, Juan Luo, Ning Shi, D. Marreiro, S. Mallikarjunaswamy, M. Shrivastava
{"title":"工程定制TLP I-V特性,采用可控硅二极管系列ESD保护概念","authors":"H. B. Variar, S. K. Gautam, Ashita Kumar, K. M. Amogh, Juan Luo, Ning Shi, D. Marreiro, S. Mallikarjunaswamy, M. Shrivastava","doi":"10.1109/IRPS48203.2023.10118220","DOIUrl":null,"url":null,"abstract":"This work demonstrates an SCR-Diode series ESD Protection concept, which can be engineered to provide a custom TLP I-V characteristic. SCRs and diodes with dimensional variations have been used in different combinations and width ratios, which results in a range of TLP I-V characteristics. This protection circuit comes with several advantages as adaptability for various ESD protection windows, the benefits of using SCR as a protection device and the ease of designing the circuit. Along with TCAD studies, experimental data demonstrates that N-well and P-well doping of SCR can be used to further tune the Vhold and Ron of the protection circuit.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept\",\"authors\":\"H. B. Variar, S. K. Gautam, Ashita Kumar, K. M. Amogh, Juan Luo, Ning Shi, D. Marreiro, S. Mallikarjunaswamy, M. Shrivastava\",\"doi\":\"10.1109/IRPS48203.2023.10118220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work demonstrates an SCR-Diode series ESD Protection concept, which can be engineered to provide a custom TLP I-V characteristic. SCRs and diodes with dimensional variations have been used in different combinations and width ratios, which results in a range of TLP I-V characteristics. This protection circuit comes with several advantages as adaptability for various ESD protection windows, the benefits of using SCR as a protection device and the ease of designing the circuit. Along with TCAD studies, experimental data demonstrates that N-well and P-well doping of SCR can be used to further tune the Vhold and Ron of the protection circuit.\",\"PeriodicalId\":159030,\"journal\":{\"name\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"140 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS48203.2023.10118220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10118220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept
This work demonstrates an SCR-Diode series ESD Protection concept, which can be engineered to provide a custom TLP I-V characteristic. SCRs and diodes with dimensional variations have been used in different combinations and width ratios, which results in a range of TLP I-V characteristics. This protection circuit comes with several advantages as adaptability for various ESD protection windows, the benefits of using SCR as a protection device and the ease of designing the circuit. Along with TCAD studies, experimental data demonstrates that N-well and P-well doping of SCR can be used to further tune the Vhold and Ron of the protection circuit.