铜互连中热致空洞的形成。主要物理参数的评估

Y. Ding, O. Pedreira, M. Lofrano, H. Zahedmanesh, T. Chavez, Hosain Farr, I. Wolf, K. Croes
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引用次数: 1

摘要

利用专用的测试结构,对热迁移(TM)引起的空隙形成的主要物理参数进行了评估。基于物理和电学上的空洞分析,我们通过实验确定了含CD~1µm的铜互连的空洞成核时间,并估计了输移热参数Q^{\ast}= 0.21$ eV。我们的研究表明,与热膨胀系数(CTE)失配引起的初始应力迁移(SM)相比,TM对金属通量的贡献高6倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parameters
Using a dedicated test structure, the main physical parameters of void formation due to thermomigration (TM) were assessed. Based on physical and electrical void-analyses, we experimentally determined the time to void nucleation and estimated the heat of transport parameter $Q^{\ast}= 0.21$ eV for Cu interconnects with CD~1µm, Our studies show that TM has a 6x higher contribution to metal flux compared to the initial stress migration (SM) induced by the coefficient of thermal expansion (CTE) mismatch.
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